Abstract:Silicon vacancies in diamond, one of the most promising single photon sources, is difficult to be achieved in a controlled and reproducible way due to complicated doping behavior of silicon in diamond by microwave plasma CVD. In this work, the underneath mechanism of silicon vacancies formed by unintentional silicon (The silicon source is SiO2 from the microwave plasma CVD quartz window) doping in diamond was investigated from the view of growing surface kinetics through a series of experiments. During deposition, the addition of N2 to the CH4-H2 reaction gas mixture is beneficial to the formation of silicon vacancies in diamond from unintentional silicon doping, and the addition of a minor amount of oxygen will enhance the plasma etching. The increased number of the dangling bonds is beneficial to the formation of silicon vacancies and nitrogen vacancies in diamond, while excessive oxygen will passivation the dangling bonds and thus inhibit the formation of vacancies. Finally, the vertical distributions of the surface topography, growth rate, intensity of photoluminescence of NV and SiV color centers doped in the diamond film, are measured with high spatial resolution on growth surface, which are also related to the plasma electron temperature and density. These findings are of importance for searching of optimal growth regimes of NV and SiV doped single crystals by microwave plasma CVD.

Kinetics of SiC Formation During High P–T Reaction Between Diamond and Silicon

Reaction Mechanism of Ti<SUB>3</SUB>SiC<SUB>2</SUB> Formed on the Diamond

Reaction mechanism of Ti3SiC2 formed on the diamond

Synthesis of Nano-Polycrystalline Diamond under High Pressure and High Temperature

In Situ X-ray Diffraction Study of Silicon at Pressures Up to 15.5 GPa and Temperatures Up to 1073 K

Micron Diamond Composites with Nanocrystalline Silicon Carbide Bonding

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Diamond–SiC nanocomposites sintered from a mixture of diamond and silicon nanopowders

Formation of grain boundaries in nanocrystalline SiC ceramics examined by powder diffraction supported by MD simulations

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Effect of diamond surface structure on the interfacial reaction and properties of diamond/SiC composites

A study of reaction between palladium, palladium silver alloy and silicon carbide ceramics at high temperature

Examination of the Atomic Pair Distribution Function (PDF) of SiC Nanocrystals by In-Situ High Pressure Diffraction

Kinetics of Silane Decomposition in High-Pressure Confined Chemical Vapor Deposition of Hydrogenated Amorphous Silicon

Formation Mechanism of SiV in Diamond from Unintentional Silicon Doping by Microwave Plasma Chemical Vapor Deposition

The Interface Diffusion and Chemical Reaction Between a Ti Layer and a Diamond Substrate

Kinetics of Platinum Silicide Formation Followed in Situ by Spectroscopic Ellipsometry

High Resolution Transmission Electron Microscopy Study Of The Initial Growth Of Diamond On Silicon

Reaction mechanism and mechanical properties of SiC joint brazed by in-situ formation of Ti3SiC2

Graphitization of Diamond Powders of Different Sizes at High Pressure–high Temperature