Micron Diamond Composites with Nanocrystalline Silicon Carbide Bonding

Neutron Scattering Center, MS-H8 Los Alamos National Laboratory,Zerda T. W.,He D.,Daemen L.,Zhao Y.
DOI: https://doi.org/10.1557/jmr.2003.0161
2003-01-01
Abstract:Diamond composites with nanocrystalline cubic silicon carbide bonding were sintered from diamond/amorphous silicon mixtures under high pressure and high temperature ( p = 5 GPa and temperatures up to 1673 K). Differential scanning calorimetry, ex situ x-ray, and Raman spectroscopy investigations showed that amorphous silicon partially transformed into nanocrystalline silicon at 873 K under 5 GPa. This was followed by the formation of nanocrystalline silicon carbide from the reaction between the silicon and diamond after silicon melting. Refinement of the x-ray diffraction patterns of composites with the Rietveld method revealed that considerable microstrain (0.3–0.5%) remained within the nanocrystalline silicon carbide grains. Small strain (0.1–0.2%) was observed in the compacted diamonds, but after the reaction they became almost strain free (<0.1%). Enhanced fracture toughness was obtained for hybrid composites compared to liquid-infiltrated composites.
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