Abstract:Epitaxial thin film growth by vapor deposition or molecular beam epitaxy under ultra-high vacuum conditions generally occurs in two stages: (i) nucleation and growth of well-separated islands on the substrate; (ii) subsequent formation of a thicker continuous film with possible kinetic roughening. For homoepitaxial growth, two-dimensional (2D) monolayer islands are formed during submonolayer deposition. Typically, the presence of a step-edge barrier inhibits downward transport and leads to the formation of mounds (multilayer stacks of 2D islands) during multilayer growth. For heteroepitaxial growth, islands formed in the initial stages of deposition sometimes have a 2D monolayer structure. However, they may instead exhibit bilayer or 3D multilayer structure due to, e.g., a high film surface energy, strain, or quantum size effects. Various growth modes are possible for thicker films. Atomistic modeling provides the most detailed picture of film growth. For coherent (defect-free) epitaxial films, lattice-gas modeling analyzed by kinetic Monte Carlo simulation (KMC) is particularly successful in describing film growth on the appropriate time and length scales. For large islands or complex systems, another effective and instructive approach is laterally coarse-grained step-dynamics modeling which tracks only the evolution of step edges in each layer. However, fully coarse-grained 3D continuum modeling for the evolution of a film height function does not yet have predictive capability. Examples are provided for: Ag homoepitaxy on (100), (111) and (110) surfaces; Ag heteroepitaxy on lattice-matched substrates including NiAl(110), NiAl(100), and Fe(100); and Ag heteroepitaxy on 5-fold icosohedral Al-Pd-Mn and 2-fold decagonal Al-Cu-Co quasicrystalline surfaces.

Scanning Tunneling Microscopy and Density Functional Theory Study of Initial Bilayer Growth of Ag Films on Nial(110)

Formation and Coarsening of Ag(110) Bilayer Islands on Nial(110): Stm Analysis and Atomistic Lattice-Gas Modeling

Kinetics of Facile Bilayer Island Formation at Low Temperature: Ag/NiAl(110).

Observation of a Surface Alloying-to-dealloying Transition During Growth of Bi on Ag(111)

Exploration of Complex Multilayer Film Growth Morphologies: Stm Analysis and Predictive Atomistic Modeling for Ag on Ag(111)

Quantum Stabilities and Growth Modes of Thin Metal Films: Unsupported and NiAl-supported Ag(110) and Ag(100)

From Initial to Late Stages of Epitaxial Thin Film Growth: Stm Analysis and Atomistic or Coarse-Grained Modeling

Far-from-equilibrium Film Growth on Alloy Surfaces: Ni and Al on NiAl(110)

Atomistic Insights into the Growth of Bi (110) Thin Films on Cu (111) Substrate

Electron and lattice structure of ultra thin Ag films on Si(111) and Si(001)

Growth And Morphology Of Ni/Cu(100) Ultrathin Films - An In-Situ Study Using Scanning-Tunneling-Microscopy

Pits and Adatoms at the Interface of 1-Ml C-84/Ag (111)

The Growth and Crystalline Structure of Ultrathin Mn Films on Ni(111)

Two-Dimensional Growth Of Al Films On Si(111)-7 X 7 At Low-Temperature

Growing Extremely Thin Bulklike Metal Film on a Semiconductor Surface: Monolayer Al(111) on Si(111)

Temperature-Dependent Growth Shapes Of Ni Nanoclusters On Nial(110)

Epitaxial Growth of Ultrathin Gallium Films on Cd(0001)

Domain Boundaries and Thicknesses of Ultrathin Alumina Films on NiAl(110) and Cu-Al(111) Studied by STM

A Molecular Dynamics Simulation on the Agglomeration Behavior of Cu on TaN(111)Surface

Nanoscale “quantum” Islands on Metal Substrates: Microscopy Studies and Electronic Structure Analyses

Atomic Structure and Bonding of Epitaxial CU Films on (1120) A-Al203