Abstract:Silicon Carbide (SiC) is a booming semiconductor material with a wider bandgap than silicon, which brings superior electrical performance for applications such as high critical electric field, good high-temperature characteristics, etc. Among SiC devices, MOSFET received increasing attention, due to its excellent advantages such as low switching loss, high operating frequency, etc. In recent years, SiC MOSFETs were under fast development, while facing numerous challenges. For high voltage SiC MOSFET, the size of the device and drift region resistance are the main bottlenecks. The superjunction (SJ) structure is well-known as a "milestone" in the history of power devices, especially for MOSFET. Superjunction achieved a better trade-off between the breakdown voltage and the specific on-resistance by introducing a transverse electric field to the drift layer. A 3.3kV-class SiC SJ MOSFET was so far reported as a ultra-low specific on-resistance for 3.3 m Omega cm(2) at room temperature and 6.2 m Omega cm(2) at 175 degrees C.[21] However, the development of SiC SJ MOSFETs is facing challenges, in terms of the fabrication of the p-pillar, the charge balance condition, etc. In this paper, recent progress on SiC SJ MOSFET was reviewed and listed through countries and regions. Achievements in both theoretical simulation and device fabrication were analyzed and compared. Moreover, constraints and prospects for the development of SiC SJ MOSFET were also discussed. Through this review, it is expected to help researchers to summarize recent advances on the SiC SJ MOSFET and to analyze the future trends, and to provide strategic planning for practitioners.

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Design of high voltage super junction VDMOS

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Fabrication and Optimization of a High-Reliability 700 V Super-Junction MOSFET with Segmented P-Buried RESURF Termination

Concept and design of super junction devices

Novel Superjunction LDMOS (>950 V) with a Thin Layer SOI

The Development of the 200 V VDMOS with Large Current

Optimization of Reverse Recovery Characteristics Based on Termination Structure for 700V Super-Junction VDMOS

High-Voltage SOI Deep Trench LDMOS with Quasi Vertical Super Junction Structure

A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness

A Novel Super-junction LDMOST Concept with Split P Columns *

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

Deep oxide trench termination structure for super-junction MOSFET

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

4H-Sic Super-Junction JFET: Design and Experimental Demonstration

Design and Process Analysis of a Split-Gate Trench Power MOSFET with Bottom-Trench Hk-Pillar Superjunction for Enhanced Performance

Development of SiC Superjunction MOSFET: A Review

Study on A Novel Trench LDMOS with Double Deep Trenches and Superjunction

Fabrication and Optimization of a High Speed Deep-Trench Super-Junction MOSFET with Improved EMI Performance

A High Breakdown Voltage Superjunction MOSFET by Utilizing Double Trench Filling Epitaxy Growth

The Superjunction Device with Optimized Process Window of Breakdown Voltage