Abstract:A partially-depleted dual-material surrounding-gate metal-oxide-semiconductor field-effect-transistor (MOSFET) structure (DMSG) is proposed to suppress the short channel effect and to increase the current drivability. Two-dimensional analytical models for both surface potential and threshold voltage are respectively presented for the novel structure. The dual-material surrounding gate consists of two metals connecting tightly with different work functions, and it can produce the electric field peak near the source in the channel, decrease the electric field near the drain, and mask the influence of the drain voltage on the minimum surface potential. The potential Poisson equations in the two depleted divisions are given with the boundary conditions in the cylindrical coordinate system. The analytical models are derived based on the solution of the partial differential equations through reducing the dimensions with parabolic potential approximation in the direction vertical to the channel. Numerical simulation and comparisons with the traditional partially depleted device show that the DMSG device increases the carrier transport efficiency, and suppresses the short channel effect, drain-induced barrier lowering effect and hot carrier effect, and that the relative error between the derived analytical model and the numerical simulation software is less than 5%.

Analytical and Numerical Study of the Impact of Halos on Surrounding-Gate Mosfets

Performance and Analytical Modelling of Halo-Doped Surrounding Gate Mosfets

Analytical Modeling and Simulation of Dual-Material Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Single-Halo Doping

Analytical Model for Threshold Voltage of Hetero-Gate SOI MOSFET with Asymmetric Halo

Dual Material Gate SOI MOSFET with a Single Halo

Current modeling and simulation of dual-material surrounding-gate MOSFET with asymmetric halo

Analysis and Optimization of Sub-100 Nm NMOS with Halo

Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETs.

An analytical threshold voltage model of halo-implanted MOSFETs

Threshold Voltage Modeling of Partially-Depleted Dual-Material Surrounding Gate Field-Effect Transistor

Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

Subthreshold current model of fully depleted dual material gate SOI MOSFET

A Single-Halo Dual-Material Gate SOI MOSFET

Optimization Of A Sub 0.1-Mu M Asymmetric Halo Soi-Mosfet For High Performance Digital Applications

The Effect of Halo Implantation on the Performance of 50 nm NMOS Device

A carrier-based analytic model for undoped surrounding-gate MOSFETs

Influence of Halo Implantations on the Total Ionizing Dose Response of 28 nm pMOSFETs Irradiated to Ultra-High Doses

A Novel Super-Halo Doping Concept for Nanoscale CMOS Technology

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

A Complete Carrier-Based Non-Charge-Sheet Analytic Theory for Nano-Scale Undoped Surrounding-Gate MOSFETs