Abstract:A partially-depleted dual-material surrounding-gate metal-oxide-semiconductor field-effect-transistor (MOSFET) structure (DMSG) is proposed to suppress the short channel effect and to increase the current drivability. Two-dimensional analytical models for both surface potential and threshold voltage are respectively presented for the novel structure. The dual-material surrounding gate consists of two metals connecting tightly with different work functions, and it can produce the electric field peak near the source in the channel, decrease the electric field near the drain, and mask the influence of the drain voltage on the minimum surface potential. The potential Poisson equations in the two depleted divisions are given with the boundary conditions in the cylindrical coordinate system. The analytical models are derived based on the solution of the partial differential equations through reducing the dimensions with parabolic potential approximation in the direction vertical to the channel. Numerical simulation and comparisons with the traditional partially depleted device show that the DMSG device increases the carrier transport efficiency, and suppresses the short channel effect, drain-induced barrier lowering effect and hot carrier effect, and that the relative error between the derived analytical model and the numerical simulation software is less than 5%.

Threshold Voltage Modeling of Partially-Depleted Dual-Material Surrounding Gate Field-Effect Transistor

Analytical Modeling and Simulation of Dual-Material Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Single-Halo Doping

Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

Two-Dimensional Analytic Model for Fully Depleted Surrounding Gate Metal-Oxide-Semiconductor Field-Effect Transistor

Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETs.

Two-Dimensional Threshold Voltage Analytical Model of Dmg Strained-Silicon-On-Insulator Mosfets

Subthreshold current model of fully depleted dual material gate SOI MOSFET

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

Threshold Voltage Modeling of Deep-Submicron Double-Gate Fully-Depleted SOI MOSFET

Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors

A dual gate material tunnel field effect transistor model incorporating two‐dimensional Poisson and Schrodinger wave equations

A Two-Dimensional Analytical Model of Fully Depleted Asymmetrical Dual Material Gate Double-Gate Strained-Si MOSFETs

An analytic channel potential based model for dynamic depletion surrounding-gate mosfets with arbitrary doping level

Dual Material Gate SOI MOSFET with a Single Halo

Analytical Model for Threshold Voltage of Hetero-Gate SOI MOSFET with Asymmetric Halo

A Single-Halo Dual-Material Gate SOI MOSFET

Analytic Investigation on the Threshold Voltage of Fully-Depleted Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Compact Analytical Model of Dual Material Gate Tunneling Field Effect Transistor using Interband Tunneling and Channel Transport