Abstract:The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they are limited in detecting 1.55 um light detection. This study proposes a p-type Si on n-type GaAs0.51Sb0.49 (GaAsSb) lattice matched to InP substrates heterojunction formed using a grafting technique for future GaAsSb/Si APD technology. A p+Si nanomembrane is transferred onto the GaAsSb/AlInAs/InP substrate, with an ultrathin ALD-Al2O3 oxide at the interface, which behaves as both double-side passivation and quantum tunneling layers. The devices exhibit excellent surface morphology and interface quality, confirmed by atomic force microscope (AFM) and transmission electron microscope (TEM). Also, the current-voltage (I-V) of the p+Si/n-GaAsSb heterojunction shows ideal rectifying characteristics with an ideality factor of 1.15. The I-V tests across multiple devices confirm high consistency and yield. Furthermore, the X-ray photoelectron spectroscopy (XPS) measurement reveals that GaAsSb and Si are found to have type-II band alignment with a conduction band offset of 50 meV which is favorable for the high-bandwidth APD application. The demonstration of the GaAsSb/Si heterojunction highlights the potential to advance current SWIR PD technologies.

Characterizations of in Z Ga 1− Z As 1− X − Y N X Sb Y P-i-N Structures Grown on GaAs by Molecular Beam Epitaxy

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

quantum well structures grown by molecular beam epitaxy

Inp and Ingaasp Materials Grown by Solid-Source Molecular Beam Epitaxy

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers

In1-Xgaxasyp1-Y Nipi Structure And Its Application To Semiconductor Optical Amplifiers

Solid-Source Molecular Beam Epitaxial Growth of InP and InGaAsP

A surface and interface study on the InSb/GaAs heterostructures

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

Study on Epitaxial Growth of High‐Quality InSb Materials

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

Competitive Emissions of InAs (qds)/gainasp/inp Grown by GSMBE

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction

InAsyP1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4

High Carrier Lifetime Insb Grown on Gaas Substrates

Thin InSb Films on GaAs Substrates by Molecular Beam Epitaxy

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

Molecular Beam Epitaxial Growth and Electronic Transport of GaInSb/GaSb (111) Quantum Wells