Structure of the Ge–Sb–Te phase-change materials studied by theory and experiment

Zhimei Sun,Stepan Kyrsta,Denis Music,Rajeev Ahuja,Jochen M. Schneider

DOI: https://doi.org/10.1016/j.ssc.2007.05.018

IF: 1.934

2007-01-01

Solid State Communications

Abstract:We have studied the structure of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 compounds using theoretical and experimental means. Based on ab initio calculations, we propose the stacking sequence in the [111] direction of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 phases to be Te–Ge–Te–Sb–Te–v–Te–Sb–, Te–Ge–Te–Sb–Te–v–Te–Sb–Te–Sb–Te–v–Te–Sb–, and Te–Ge–Te–Ge–Te–Sb–Te–v–Te–Sb–Te–Ge–, respectively, where v is an ordered vacancy layer. This structural model agrees with the X-ray diffraction data of sputter-deposited Ge2Sb2Te5, GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 thin films.