Abstract:Atmospheric-pressure (AP) plasma sources have attracted researchers in many engineering fields, due to its low cost and easy handling. The AP plasma technique has been successfully applied on the surface figuring and texturing of Si, fused silica, RS-SiC, and SiC, etc. However, these studies focus more on better control for surface figuring of the substrate. The understanding of how the Si surface roughening or smoothing is occurred during the AP plasma etching using He-based CF4 mixture gas has seldom been reported. The present study starts from a parametric study of O2 addition concentration to He-based CF4 plasma. A groove is initially etched on a single-crystal silicon wafer by the CCP-type parallel-plate plasma etcher, to study the etching rate, surface morphology, material removal characteristics, and surface roughness evolution after the plasma etched removal. It is revealed that the material removal with a typical profile is achieved without introducing further damage. At the same time, the surface finish and surface integrity were enhanced by the AP plasma. The underlying mechanism of the process was investigated. Additionally, the optimized gas composition is then applied to the larger area etching by the computer-controlled scanning with different feed rates. Based on the experimental results, the surface evolution during the plasma etching process is revealed in detail. The surface removal profile also demonstrates that this method can provide an alternative way to achieve damage-free material removal for a larger area substrate by the duplicating of the typical removal profile with different etching path.

Study of the plasma etching process for low-loss SiO2/Si optical waveguides

Rib and strip chalcogenide waveguides based on Ge-Sb-Se radio-frequency sputtered films

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Optimization of Plasma Etching Parameters and Mask for Silica Optical Waveguides

Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

Low Propagation Loss Ge-on-Si Waveguides and Their Dependency on Processing Methods

Improvement of ICP etching process for reducing the surface roughness of SiO2 optical waveguides

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

A study on the etching characteristics of atmospheric pressure plasma for single-crystal silicon wafer

Influence of Etching Parameters on Sidewall Roughness of Silicon Based Waveguide Etched by Inductively Coupled Plasma

Optimized Inductively Coupled Plasma Etching for Poly(Methyl-Methacrylate-Glycidly-Methacrylate) Optical Waveguide

Study of SiO2 Films Prepared by Electron Cyclotron Resonant Microwave Plasma

A Study of High Aspect Ratio Si Trench in Cycle Mode Etching with Mask no Loss

Laser Annealing of SiO2 Film Deposited by ICPECVD for Fabrication of Silicon Based Low Loss Waveguide

Simulation of SiO2 etching in an inductively coupled CF4 plasma

Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

Study on the Key Parameters in Etching of Fused Silica Using Atmospheric Inductively Coupled Plasma

Investigation on femtosecond laser combined with dynamic wet etching machining of SiC/SiC

High-etch rate processes for performing deep, highly anisotropic etches in silicon carbide using inductively coupled plasma etching

Planar optical waveguide thin films grown by microwave ECR PECVD