Abstract:Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H+ implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 1016, 1 × 1017, or 2 × 1017 ion/cm2, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 1016 O atoms/cm2 situated at a depth close to that of the peak of the implanted H+. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.

IR and SIMS Studies in 70% SiC–C Films of Hydrogen Introduced with Different Methods

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Nmr-Studies of Hydrogen Microstructures in Hydrogenated Amorphous-Silicon Films

Hydrogen Resistance Property of Surface N~+ Implanting SiC Coating

Measurement and Analysis of Composition and Depth Profile of H in Amorphous Si 1− X C X :H Films

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Structural Investigation And Barrier Properties Of A-C : H Thin Films On Polymer By Pecvd

Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

The Effect of Diluent Gases on the Growth of Β-Sic Films by Laser CVD with HMDS

Silicon Carbide Formation by Methane Plasma Immersion Ion Implantation into Silicon

The influence of the growth conditions on the structural and optical properties of hydrogenated amorphous silicon carbide thin films

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide

Transition Between Amorphous and Crystalline Phases of SiC Deposited on Si Substrate Using H3SiCH3

Transport properties of µc-Si:H films prepared by very high hydrogen-diluted silane plasma

Cavity ring down study of the densities and kinetics of Si and SiH in a remote Ar-H2-SiH4 plasma