Abstract:A study has been made of the electrical behaviour of In-doped metal organic vapour phase epitaxy (MOVPE) layers of Hg(1-x)Cd(x)Te grown by the interdiffused multilayer process (imp) in order to establish the factors needed to obtain uniform extrinsic n-type layers with high electrical activity and mobility. Layers with x between 0.2 and 0.3 were grown on (100) CdTe and CdTeSe at 360-degrees-C using di-isopropyltelluride (DIPT) and doped with trimethylindium (TMIn) in two ways, depending on In concentration, [In]. For [In] > 1 x 10(17) cm-3 layers were doped with TMIn on the CdTe part of the imp cycle while for [In] in the range 1 X 10(15) to l X 10(17) cm-3 the TMIn memory of the growth system was used, resulting in doping on the HgTe part of the imp cycle because of a greater efficiency of incorporation. In profiles, which were determined by secondary-ion mass spectrometry (SIMS), are shown to depend on doping process due to TMIn partial pressure variations from adsorption effects. The layers, which were capped with CdTe to prevent inadvertent post-growth annealing from affecting the electrical activity of the In, were p type when undoped. On doping, as-grown layers become n type at 77 K at [In] approximately 1 x 10(16) cm-3 due to the concentration of donors exceeding the background concentration of Hg acceptor vacancies. The percentage of In electrically active is 33 % at [In] less-than-or-equal-to 2 x 10(18) cm-3 and 15-20 % at higher [In]. The 77 K Hall mobilities of layers, both p and n type, are low when [In] > 1 x 10(16) cm-3, probably because of high levels of compensation. Low temperature annealing to remove Hg vacancies, both ex situ and in situ, significantly improves the electrical properties. Electrical activity of the In increases to 100 % over the [In] range 1 x 10(15) to 2 x 10(18) cm-3 and to 40 % at higher concentrations. 77 K Hall mobility of the n-type layers increases and shows a dependence on carrier concentration and x consistent with lightly compensated material. Results are in agreement with In doping introducing autocompensating centres which anneal out on a low-temperature Hg-rich anneal.

Study of Si-substrate HgCdTe Electrical Properties

The Study of HgCdTe on Si by MBE

MBE HgCdTe on Alternative Substrates for FPA Applications

Optical and Electronic Characterization on HgCdTe Materials

Study of Anneal Technology for HgCdTe at Hg-rich Condition

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)

Influence of annealing on the surface structure evolution of intrinsic p-type HgCdTe films.

Minority Carrier Mobility Measurement in HgCdTe with Light-Modulated Hall Effect

The Acceptor Properties of Un-Intentionally Doped P-Type Mbe-Grown Hg1-Xcdxte

Progress in MBE growth of HgCdTe @ SITP

On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process

MBE HgCdTe on Si and GaAs Substrates

Mbe Growth of Si/CdTe( 211 ) Composite Substrates

The influence of Hg vacancy control of HgCdTe materials with different passivation layers through thermal annealing

Study of dislocation density in MBE HgCdTe epilayers

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

Control of the Electrical Properties of In-doped HgCdTe Grown by MOVPE for IR Detector Applications

Research activities in MBE HgCdTe at SITP

Magnetic field dependence of Hall coefficient and conductivity of p-type Hg1-xCdxTe grown by MBE

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Ag doping of p-type HgCdTe grown by LPE