Study on Strain and Piezoelectric Polarization of Aln Thin Films Grown on Si

YZ Deng,YC Kong,YD Zheng,CH Zhou,DJ Xi,P Chen,SL Gu,B Shen,R Zhang,P Han,R Jiang,Y Shi
DOI: https://doi.org/10.1116/1.1927533
2005-01-01
Abstract:The strain and piezoelectric polarization of AIN thin films grown on Si(111) substrates by metalorganic chemical-vapor deposition were investigated by using x-ray diffraction and Raman measurements. The stress and piezoelectric polarization of the AIN films were analyzed with E-2 (high) phonon-mode frequency shifts in Raman spectra. The result indicates that the biaxial compressive stress is about 4.3 GPa, and the piezoelectric polarization is about 1.91 X 10(-2) C/m(2). Phonons of Si-N bonds were also observed accompanying phonons of AIN crystal in Raman spectra, which indicate the interdiffusion of Si and N atoms during growth. (c) 2005 American Vacuum Society.
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