Microstructure and Electronic Properties of Al/Zr/Linbo3 Multilayers

DM Li,F Pan,XB Wang,JB Niu,M Liu
DOI: https://doi.org/10.4028/www.scientific.net/msf.475-479.3775
2005-01-01
Abstract:To obtain both high power durability and fine-dimensional control in high-frequency surface acoustic wave devices, a highly oriented (111) texture was developed in electronic beam evaporated Al films on Zr underlayer. In this paper, the effects of Zr underlayer on the microstructure and resistivity of Al/Zr/LiNbO3 films were investigated. The films show an extremely smooth surface. The optimum annealing temperature is 200 °C to obtain low resistivity. For Al films with Zr underlayer, reactive ion etching with gases containing BCl3 can be more easily performed than that for Al films with Cu underlayer.
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