The Effect of SiO_2 Film on Electrical Property of Solar Cell

HU Yu,MENG Fan-ying,WANG Jian-qiang,LI Xiang,HUANG Jian-hua
DOI: https://doi.org/10.16183/j.cnki.jsjtu.2009.11.032
2009-01-01
Abstract:The passivation of SiO_2 film on the crystalline silicon(C-Si) wafers was discussed including the variation of solar cells property with the different passivation films.Based on the PC1D softwre,the C-Si solar cells with SiO_2/SiN_x were simulated,the effect of front surface recombination velocity(FSRV) and bulk lifetime(τ_b) on electrical properties was investigated.According to the simulation,the output electrical properties will take on linear degradation when the FSRV is greater than 10~4 cm/s,while I_(sc) and U_(oc) will increase lineally when τ_b is less than 30 μs.The comparison was made in this work about the passivation effect of SiO_2,SiN_x and SiO_2/SiN_x on C-Si wafers.It is demonstrated that effective minority carrier lifetime of C-Si wafers passivated by SiO_2/SiN_x is increased greatly during the annealing.Furthermore,I_(sc),U_(oc),conversion efficiency and internal quantum efficiency of solar cells with SiN_x/SiO_2 films are improved.
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