Observation of Barrier-Induced Strain Relaxation in InGaAs/GaAs Single Quantum Wells

WZ SHEN,XC SHEN,WG TANG,T ANDERSSON

DOI: https://doi.org/10.1088/0256-307x/11/11/010

1994-01-01

Abstract:Reasonably good agreement among the photoluminescence, absorption, in-plane photocurrent and theoretical calculation demonstrates the effect of GaAs barrier width on the strain in In0.20Ga0.80As/GaAs single quantum wells. The strain of each sample has been deduced.

What problem does this paper attempt to address?

Strain-induced Electronic Energy Changes in Multilayered InGaAs∕GaAs Quantum Wire Structures

Zhixun Ma,Todd Holden,Zhiming M. Wang,Gregory J. Salamo,Lyudmila Malikova,Samuel S. Mao

DOI: https://doi.org/10.1063/1.2437574

IF: 2.877

2007-01-01

Journal of Applied Physics

Abstract:Electronic states of layered InGaAs∕GaAs(001) quantum wire and quantum dot chain structures have been investigated by electroreflectance and surface photovoltage spectroscopy. Band-gap shrinkage and heavy-hole/light-hole state splitting have been observed in the GaAs barrier material. This can be understood by shear strain existing in the GaAs barrier due to strain relaxation and anisotropy within the wires or dot chains. By comparing the experimental results with theoretical calculations, we found that the strain relaxation in the direction perpendicular to the wires or the dot chains has a stronger effect on the heavy-hole–light-hole splitting than on band-gap modification in the InGaAs wires and dot chains. The piezoelectric field induced by the shear strain is also discussed.
Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Liang-Xin Li,Sophia Sun,Yia-Chung Chang

DOI: https://doi.org/10.48550/arXiv.cond-mat/0005392

2000-05-23

Mesoscale and Nanoscale Physics

Abstract:A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.
Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

H.P. Lei,H.Z. Wu,Y.F. Lao,M. Qi,A.Z. Li,W.Z. Shen

DOI: https://doi.org/10.1016/S0022-0248(03)01345-9

IF: 1.8

2003-01-01

Journal of Crystal Growth

Abstract:Strained InAs0.43P0.57/InP and strain-compensated InAs0.43P0.57/In0.7Ga0.3As0.43P0.57 multiple quantum well (MQW) structures were grown by gas source molecular beam epitaxy. The observations of up to 5 satellite-diffraction peaks from the high-resolution X-ray diffraction measurements demonstrate good crystalline quality for both structures. The temperature dependence of the 1e–1hh transition energies, the line width of photoluminescence (PL) spectra and emission efficiency η of the two quantum well structures are compared by low-temperature PL measurements. The temperature dependence of the 1e–1hh transitions of the two quantum well structures is similar to that of InAs0.43P0.57 bulk material. The thermal activation energies obtained for strain-compensated MQW are larger than those obtained for the strained one. Consequently, the PL emission efficiency decays much slower for the strain-compensated MQW than that for the strained one when temperature increases, indicating the superior temperature stability of luminescent efficiency for the strain-compensated MQW. The obtained results can be used as references to the design and fabrication of optoelectronic devices.
Investigation of quantum-confinement effect and Stokes shift in strained Ga1−xInxN/GaN double quantum wells by spectroscopic ellipsometry and photoluminescence

Myoung Hee Lee,Kwang Joo Kim,Eunsoon Oh

DOI: https://doi.org/10.1063/1.1355987

IF: 4

2001-04-16

Applied Physics Letters

Abstract:The evolution of the optical absorption and emission properties of strained Ga1−xInxN/GaN double quantum wells grown on (0001)-oriented sapphire substrates with varying well width has been investigated by spectroscopic ellipsometry (SE) and photoluminescence (PL). The SE result shows that the band-gap absorption energy of the wells shifts to higher energies as the well width decreases, indicating a quantum-confinement effect. The decreasing trend agrees with the result of one-dimensional square-well potential calculations. The PL result shows a Stokes shift of the emission edge from the corresponding absorption edge, attributable to the combined effects of the strain-induced piezoelectric potential and the In-fluctuation potential in the well. The blueshift of the emission edge with increasing PL excitation density further supports the existence of a strong piezoelectric field in the well.

physics, applied
The Effect of Inserting Strain-Compensated Ganas Layers on the Luminescence Properties of Gainnas/Gaas Quantum Well

LF Bian,DS Jiang,SL Lu,JS Huang,K Chang,LH Li,JC Harmand

DOI: https://doi.org/10.1016/s0022-0248(02)02464-8

IF: 1.8

2003-01-01

Journal of Crystal Growth

Abstract:Photoluminescence (PL) properties of GaInNAs/GaAs quantum wells (QWs) with strain-compensated GaNAs layers grown by molecular beam epitaxy are investigated. The temperature-dependent PL spectra of GaInNAs/GaAs QW with and without GaNAs layers are compared and carefully studied. It is shown that the introduction of GaNAs layers between well and barrier can effectively extend the emission wavelength, mainly due to the reduction of the barrier potential. The PL peak position up to 1.41μm is observed at the room temperature. After adding the GaNAs layers into QW structures, there is no essential deterioration of luminescence efficiency. N-induced localization states are also not remarkably influenced. It implies that with optimized growth condition, high-quality GaInNAs/GaAs QWs with strain-compensated GaNAs layers can be achieved.
Temperature dependent photoluminescence study of In0.63Ga0.37As/InP compressively strained single quantum wells

Xiaoliang Wang,Dianzhao Sun,Meiying Kong,Xun Hou,Xiping Zheng

1997-01-01

Abstract:We report on photoluminescence study of In0.63Ga0.37As/InP compressively strained single quantum wells (CSSQWs) with differing well widths measured over temperatures ranging from 10K to 300K. it is found that the temperature dependence of the exciton energies of CSSQWs are similar to that of bulk material and are independent of the quantum well width. Doublets are observed for the 1nm well due to one monolayer fluctuation at the quantum well interface, showing that the sample has good quality. Considering the effects of alloy concentration, quantum size effect and coherent strain, the exciton transition energies are calculated. The calculated results are in good agreement with the experiment results.
Strain Relaxation Induced by Interfacial Steps of GaAs/In0.2Ga0.8As Superlattices

EG WANG,J JIANG,XC ZHOU,AY DU,LM PENG

DOI: https://doi.org/10.1006/spmi.1993.1076

IF: 3.22

1993-01-01

Superlattices and Microstructures

Abstract:A theoretical and experimental study of GaAs/InGaAs strained-layer superlattices with ideal and stepped interfaces is presented. The stable atomic positions in the interface region with a single-layer step are determined from the elastic strain energy. A local strain field is set up by the rearrangement of the atoms near the step edge. Some fringe lines running approximately perpendicular to the epilayers have been observed in the reflection electron microscopy images of GaAs/InGaAs samples grown by molecular beam epitaxy. The observations can be understood by a simple interfacial step strain-field model. Our results confirm that dislocations are not the only mechanism for surface strain relief, another case is roughness.
The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Jia Wang,Qi Wang,Xin Guo,Xiaomin Ren,Xia Zhang,Yongqing Huang

DOI: https://doi.org/10.1117/12.921319

2011-01-01

Abstract:The effect of the graded InxGa1-xAs layer on the distribution of the strain was studied by calculating the strain of different models using the finite element method. The results demonstrate that the graded InxGa1-xAs layer can reduce the strain and thus lead to longer emission wavelength. The results also demonstrate that the graded InxGa1-xAs layer can increase strain in the GaAs capping layer which cause disadvantage to grow stacked InAs/ GaAs QD structure. But the strain can be released though increase the thickness of spacer layer when grow stacked structure.
Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD

Yu Tong-Jun,Kang Xiang-Ning,Pan Yao-Bo,Qin Zhi-Xin,Chen Zhi-Zhong,Yang Zhi-Jian,Zhang Guo-Yi

DOI: https://doi.org/10.1088/0256-307x/24/5/066

2007-01-01

Abstract:InGaN/GaN MQWs, InGaN/AlGaN MQWs and InGaN/AlInGaN MQWs are grown on (0001) sapphire substrates by MOCVD. Membrane samples are fabricated by laser lift-off technology. The photoluminescence spectra of membranes show a blue shift of peak positions in InGaN/GaN MQWs, a red shift of peak positions in InGaN/AlGaN MQWs and no shift of peak positions in InGaN/AlInGaN MQWs from those of samples with substrates. Different changes in Raman scattering spectra and HR-XRD (0002) profile of InGaN/AlInGaN MQWs, from those of InGaN/GaN MQWs and InGaN/AlGaN MQWs, are observed. The fact that the strain changes differently among InGaN MQWs with different barriers is confirmed. The AlInGaN barrier could adjust the residual stress for the least strain-induced electric field in InGaN/AlInGaN quantum wells.
Linear and Nonlinear Intersubband Optical Absorption in A Strained Double Barrier Quantum Well

EM Goldys,JJ Shi

DOI: https://doi.org/10.1002/(sici)1521-3951(199811)210:1<237::aid-pssb237>3.0.co;2-v

1998-01-01

Abstract:A systematic theoretical investigation of intersubband optical absorption in AlGaAs/AlAs/InGaAs strained double barrier quantum well (SDBQW) structure is presented for the first time. Electron states in a SDBQW are found to be adequately described within the framework of the envelope function approach which includes the effects of subband nonparabolicity and strain. The linear and the third-order nonlinear intersubband optical absorption are calculated using the density matrix formalism in which intrasubband relaxation is taken into account. Subband nonparabolicity and elastic strain are found to significantly influence both electron states and intersubband optical absorption. In the case of small well width, the inner-barrier thickness affects both electron states and optical absorption Our results can be used in design of high performance quantum well infrared photodetectors operating in the important wavelength region between 3 and 5 mu m.
Study of GSMBE Growth and Characteristics of High-Quality Strained In0.63Ga0.37AsInP Quantum Wells

XL Wang,DZ Sun,MY Kong,X Hou,YP Zeng

DOI: https://doi.org/10.1016/s0022-0248(97)00175-9

IF: 1.8

1997-01-01

Journal of Crystal Growth

Abstract:High-quality compressively strained In0.63Ga0.37AsInP quantum wells with different well widths (1–11 nm) have been grown coherently on InP substrates using a home-made gas source molecular beam epitaxy (GSMBE) system. The indium composition in the wells of the sample was determined by means of high-resolution X-ray diffraction and its computer simulation. It is found that the exciton transition energies determined by photoluminescence (PL) at 10 K are in good agreement with those calculated using a deformation potential model. Sharp and intense peaks for each well can be well resolved in the 10 K PL spectra. For wells narrower than 4 nm, the line width of the PL peaks are smaller than the theoretical values of the line-width broadening due to 1 ML interface fluctuation, showing that the interface fluctuation of our sample is within 1 ML. For wells of 7 and 9 nm, the PL peak widths are as low as 4.5 meV.
Strain-modulated photoelectric properties of self-rolled GaAs/Al0.26Ga0.74As quantum well nanomembrane

Fei Zhang,XiaoFei Nie,GaoShan Huang,HongLou Zhen,Fei Ding,ZengFeng Di,YongFeng Mei

DOI: https://doi.org/10.7567/1882-0786/ab2161

IF: 2.819

2019-01-01

Applied Physics Express

Abstract:In this study, we investigate the effects of stress/strain on the band structures of self-rolled GaAs/Al0.26Ga0.74As quantum wells (QWs). The results show that the two QWs are in different stress/strain statuses and the boundary line locates between the two QWs. Based on spectral characterizations under different bias voltages, we disclose that interface polarization exists in self-rolled nanomembrane. In addition, we find that the responsivity of the QW in tensile strain is higher than that in compressive strain, and therefore we fabricated a self-rolled-down tubular structure with both two QWs in tensile strain to increase the responsivity by similar to 52%. (C) 2019 The Japan Society of Applied Physics
Strain accumulation in InAs/In x Ga 1− x As quantum dots

Lu Wang,Meicheng Li,Wenxin Wang,Haitao Tian,Zhigang Xing,Min Xiong,Liancheng Zhao

DOI: https://doi.org/10.1007/s00339-010-6120-3

2011-01-01

Applied Physics A

Abstract:The effect of strain accumulation in the InAs/In x Ga 1− x As quantum dots (QDs) system was studied in this work. It was found that strain in the In x Ga 1− x As layer accumulation in the QD layer. This effect resulted in a dramatic reduction of growth mode transition thickness of the QD layer. For InAs/In 0.25 Ga 0.75 As QDs, critical thickness is measured to be as low as 1.08 ML. The experimental results in this work highlight the importance of strain accumulation in the design and fabrication of QD-based devices with metamorphic buffer layer involved.
The thermalization of photoexcited hot carriers in InxGa1−xAsGaAs strained single quantum well structures

Zhongying Xu,Weikun Ge,Jizong Xu,Yuzhang Li,Baozhen Zheng

DOI: https://doi.org/10.1016/0749-6036(90)90107-I

IF: 3.22

1990-01-01

Superlattices and Microstructures

Abstract:Both hot carrier photoluminescence and picosecond time-resolved luminescence demonstrate that photoinduced carrier relaxation processes in InxGa1−xAsGaAs strained single quantum well structures are significantly slower than in the bulk and depend on the alloy composition of the InxGa1−xAs. These results are interpreted in terms of strain induced confinement of the LO-phonon as a possible source of the reduced electron-phonon interaction.
Intersubband Optical Absorption in Strained Double Barrier Quantum Well Infrared Photodetectors

JJ Shi,EM Goldys

DOI: https://doi.org/10.1109/16.737445

1999-01-01

Abstract:A systematic theoretical investigation of intersubband optical absorption in AlGaAs/AlAs/InGaAs strained double barrier quantum well is presented for the first time, Electron states are calculated within the effective mass approximation which includes the effects of subband nonparabolicity and strain, and found to be in good agreement with experiments. Intersubband optical absorption is investigated using the density matrix formalism with the intrasubband relaxation taken into account. Analytical formulas are given for electron energies, absorption coefficient, and responsivity, Subband nonparabolicity and elastic strain are found to significantly influence both electron states and intersubband optical absorption. The peak absorption wavelength is found to decrease linearly if the In composition is increased, and an approximate formula is given. Electron states and optical absorption are affected by the inner barrier thickness if it is less than 40 Angstrom. The results are useful for design and improvement of the performance of quantum well infrared photodetectors operating in the important wavelength region between 1.5 and 4 mu m.
Hot Carrier Photoluminescence from Strained InxGa1−xAs/GaAs Single Quantum Wells

TG ANDERSSON,ZG CHEN,ZY XU,JZ XU,WK GE

DOI: https://doi.org/10.1016/0022-0248(89)90386-2

IF: 1.8

1989-01-01

Journal of Crystal Growth

Abstract:Strained single quantum well (SSQW) structures of InxGa1-xAs/GaAs, x = 0.14−0.22 and 100 Å thick, have been grown by molecular beam epitaxy. Layer thicknesses and compositions were independently calibrated by RHEED oscillations, surface profiling and photoluminescence measurements. The thickness of all SSQWs are below the critical one for development of interface defects. Photoexcitation of hot carriers by short and intense laser pulses shows excess luminescence in a high energy tail enabling determination of the carrier temperature. Carrier relaxation times are deduced by time-resolved measurements using ps excitation. The indium composition in the SSQWs has a significant effect on the carrier temperature and relaxation times. Thus in 100 Å thick wells the carrier temperature is 270 K for x = 0.14 and 360 K for x = 0.22 (at an excitation intensity of 1×104 W/cm-2). The hot carrier effect is absent in MBE-grown lattice relaxed bulk layers of the same composition.
Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

R. Santoprete,P. Kratzer,M. Scheffler,R. B. Capaz,Belita Koiller

DOI: https://doi.org/10.48550/arXiv.cond-mat/0510261

2005-10-11

Abstract:We present an atomistic study of the strain field, the one-particle electronic spectrum and the oscillator strength of the fundamental optical transition in chemically disordered In$_{x}$Ga$_{1-x}$As pyramidal quantum dots (QDs). Interdiffusion across the interfaces of an originally ``pure'' InAs dot buried in a GaAs matrix is simulated through a simple model, leading to atomic configurations where the abrupt hetero-interfaces are replaced by a spatially inhomogeneous composition profile $x$. Structural relaxation and the strain field calculations are performed through the Keating valence force field (VFF) model, while the electronic and optical properties are determined within the empirical tight-binding (ETB) approach. We analyze the relative impact of two different aspects of the chemical disorder, namely: (i) the effect of the strain relief inside the QD, and (ii) the purely chemical effect due to the group-III atomic species interdiffusion. We find that these effects may be quantitatively comparable, significantly affecting the electronic and optical properties of the dot. Our results are discussed in comparison with recent luminescence studies of intermixed QDs.

Materials Science
Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering

W.S. Tan,H.L. Cai,X.S. Wu,S.S. Jiang,W.L. Zheng,Q.J. Jia

DOI: https://doi.org/10.1016/j.jallcom.2004.11.072

IF: 6.2

2005-01-01

Journal of Alloys and Compounds

Abstract:Modulation-doped Al0.22Ga0.78N/GaN heterostructure with 1000Å Si-doped n-Al0.22Ga0.78N barrier (n-AlGaN) were deposited on (0001)-oriented sapphire (α-Al2O3) by means of atmosphere-pressure metal-organic chemical vapor deposition. The reciprocal space mappings of symmetric reflection (0002) and asymmetric reflection (101¯4) were measured with high resolution X-ray diffraction. The results indicate that the microstructure and strain status of barrier correlate to that of the underlying i-GaN layer. The barrier holds an “abnormal” strain-relaxation status, which probably results from the internal defects of n-AlGaN and the strain relaxation status at the i-GaN/α-Al2O3 interfaces. The results from grazing incidence X-ray diffraction show that the strain in barrier is nonuniform, which is consistent with the results from the reciprocal space mappings.
Strain in GaAsSb quantum well studied by X-ray diffraction and Rutherford backscattering/channeling

Shengqiang Zhou,Shude Yao,Mingfang Wu

DOI: https://doi.org/10.1016/j.spmi.2011.02.004

IF: 3.22

2011-01-01

Superlattices and Microstructures

Abstract:The strain state of a GaAs1−xSbx/GaAs single quantum well (SQW) was studied using high resolution X-ray diffraction (HR-XRD) and Rutherford backscattering/channeling (RBS/C). The results reveal that the GaAsSb quantum well has good crystalline quality and the Sb content x of the GaAsSb layer is 0.36. The 7.3nm GaAs0.64Sb0.36 layer is highly strained with a perpendicular elastic strain of 2.0% and a degree of relaxation of 0.23. Photoluminescence (PL) measurement at room temperature presents a peak at 0.995eV (1.224μm) with a linewidth of 67meV, revealing the optical properties of the GaAsSb SQW.
Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

L-X. Li,J. Sun,Y. C. Chang,Y.C. Chang

DOI: https://doi.org/10.48550/arXiv.cond-mat/9912468

1999-12-28

Mesoscale and Nanoscale Physics

Abstract:Band Structures and optical matrix elements of quantum wires(QWR's) made of short-period superlattices(SPS) with strain-induced lateral ordering(SILO) are investigated theoretically via an effective bond-orbital model(EBOM) combined with a valence-force field(VFF) model. Valence-band anistropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. In particular, Ga(1-x)In(x)As QWR's grown by SILO process are considered. A VFF model is used to find the equilibrium atomic positions in the SILO QWR structure by minimizing the lattice energy. The strain tensor at each atomic(In or GA) site is then obtained and included in the calculations of electronic states and optical peroperties. It is found that different local arrangement of atoms leads to very different strain distribution, which in term alters the optical properties. In particular, we found that the optical anisotropy can be reversed due to the change in shear strain caused by the inter-change of atomic positions. Good agreement with the existing experimental data on band gap and optical anisotropy can be obtained when a 2D alloy structure with lateral composition modulation in the InAs/GaAs interface planes of the SPS is used. Our studies revealed the possibility of "shear-strain engineering" in SILO QWR light-emitting devices to achieve desired optical anisotropy.

Observation of Barrier-Induced Strain Relaxation in InGaAs/GaAs Single Quantum Wells

Strain-induced Electronic Energy Changes in Multilayered InGaAs∕GaAs Quantum Wire Structures

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Investigation of quantum-confinement effect and Stokes shift in strained Ga1−xInxN/GaN double quantum wells by spectroscopic ellipsometry and photoluminescence

The Effect of Inserting Strain-Compensated Ganas Layers on the Luminescence Properties of Gainnas/Gaas Quantum Well

Temperature dependent photoluminescence study of In0.63Ga0.37As/InP compressively strained single quantum wells

Strain Relaxation Induced by Interfacial Steps of GaAs/In0.2Ga0.8As Superlattices

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD

Linear and Nonlinear Intersubband Optical Absorption in A Strained Double Barrier Quantum Well

Study of GSMBE Growth and Characteristics of High-Quality Strained In0.63Ga0.37AsInP Quantum Wells

Strain-modulated photoelectric properties of self-rolled GaAs/Al0.26Ga0.74As quantum well nanomembrane

Strain accumulation in InAs/In x Ga 1− x As quantum dots

The thermalization of photoexcited hot carriers in InxGa1−xAsGaAs strained single quantum well structures

Intersubband Optical Absorption in Strained Double Barrier Quantum Well Infrared Photodetectors

Hot Carrier Photoluminescence from Strained InxGa1−xAs/GaAs Single Quantum Wells

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering

Strain in GaAsSb quantum well studied by X-ray diffraction and Rutherford backscattering/channeling

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering