Influence of N2:(N2 + Ar) flow ratio and substrate temperature on the properties of zirconium nitride films prepared by reactive dc magnetron sputtering

Lili Hu,Dejie Li,Guojia Fang
DOI: https://doi.org/10.1016/S0169-4332(03)00843-2
IF: 6.7
2003-01-01
Applied Surface Science
Abstract:Preferred crystal orientation and low electrical resistivity are required for ZrNx films applied in electronic devices. In this paper, effects of N2:(N2+Ar) flow ratio (F(N2)) and substrate temperature on the properties of the films deposited on glass substrate by reactive dc sputtering are investigated. In a wide range of F(N2) (4–24%), the films show fcc NaCl structure. While for F(N2) in the ranges of 5–12, 12–24 and >24%, the films show (111)/(200), (111) only and amorphous structures, respectively. The electrical resistivity increases with F(N2) from 5 to 24%, and can be controlled to some extent by changing the substrate temperature.
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