Abstract:ZnO thin film was deposited on Si substrate with the insertion of ZnO buffer layer,which was annealed at 300 ℃ in vacuum.ZnO thin film was grown by RF magnetron sputtering deposition technique and the ZnO/ZnO-buffer/Si films have been further annealed with different annealing temperatures.The microstructure and luminescence properties of ZnO thin films were investigated by X-ray diffraction(XRD) and photoluminescence(PL) spectrum,respectively.The results reveal that the sample,which was grown on buffer layer of the deposition time is 6 min,has the best crystalline quality.The crystalline quality is markly improved with annealing temperature increasing.All films have an average optical transparency over 90% in the visible range.The optical band gaps gradually decrease from 3.221 eV to 3.184 eV within the increase of annealing temperature.Five main peaks located at about 384 nm(UV),420 nm(violet),455 nm(blue),473 nm(blue) and 530 nm(green) photoluminescence are observed from the PL spectra.The UV emission is attributed to free exciton-related activity.The violet luminescence is associated with radiative defects.The blue emission is ascribed to oxygen vacancies and interstitial Zn.The green emission is due to electron transition from deep donor levels of oxygen vacancies to shallow acceptor levels of Zn vacancies.The 455 nm blue peak shifts from 455 nm to 447 nm as the annealing temperature increases from 400 ℃ to 600 ℃.The intensity of 530 nm green first increases then decreases as annealing temperature increases,which attributes to the reduce of Zn vacancies.

Effects of the sputtering time of ZnO buffer layer on the quality of GaN thin films

Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Effect of a ZnO Buffer Layer on the Properties of Epitaxial ZnO:Ga Films Deposited on C-Sapphire Substrate

Effects of the AlN Buffer Layer Thickness on the Properties of ZnO Films Grown on C-Sapphire Substrate by Pulsed Laser Deposition

Effects of ZnO Buffer Layer Thickness on Properties of Mg_xZn_(1-x)O Thin Films Deposited by MOCVD

Effect of the ZnO buffer layer thickness on AZO film properties

Effect of AlN Buffer Layer Thickness on the Properties of GaN Films Grown by Pulsed Laser Deposition

Effects of ZnO Buffer Layer Thickness on Properties of ZnO Thin Films Deposited by Low-Pressure MOCVD

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Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD

Effects of AlN Buffer on the Physical Properties of GaN Films Grown on 6H-Sic Substrates

Effects of annealing temperature on structural and optical properties of homo-buffer layer ZnO thin films

Effects of Sputtering Time on the Properties of ZnO Thin Films Prepared by Magnetron Sputtering

Microstructural and Compositional Characteristics of GaN Films Grown on a ZnO-buffered Si (111) Wafer.

Influence of ZnO buffer layer on the electrical, optical and surface properties of Ga-doped ZnO films

Effect of Zno Sacrificial Layer Thickness on the Structure and Optical Properties of Gan Nanoparticles Prepared by Rf Magnetron Sputtering

The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GAN

Influence of Double Aln Buffer Layers on the Qualities of Gan Films Prepared by Metal-Organic Chemical Vapour Deposition

Comparative Study on MOCVD Growth of a -Plane GaN Films on r -Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers

Effects of the Low-temperature Buffer Layer on the Properties of ZnO Thin Films