Optimum design of punch-through junction used in bipolar and unipolar high voltage power devices

Jin He,Xing Zhang,Yangyuan Wang,Xuemei Xi
DOI: https://doi.org/10.1016/S0038-1101(01)00342-2
IF: 1.916
2002-01-01
Solid-State Electronics
Abstract:The optimization of base width and base doping of punch-through (PT) junction used in bipolar and unipolar high voltage power devices is analyzed in this paper. From analysis of a normalized form, the difference of the optimization design of PT junction between the bipolar and unipolar high voltage power devices is evaluated, and then a set of expressions of optimum base width and base doping for such both high voltage power devices are presented.
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