Abstract:Defect identification for unintentionally induced defects and radiation-implemented defects always attracts great attention in semiconductor materials. Recent advances in carbon-implemented single-photon emitters in silicon urgently require the accurate identification of defect structures to reveal transition mechanisms. Using hybrid functional with finite size correction, we investigate the charge and optical transitions of carbon-related defects, including CSiCSi, VSiCSi, CSi, SiiCSiCSi, and Ci. Except for Ci, other defects present the negative-U feature in the charge transition process. CSiCSi and VSiCSi tend to perform p-type conductivity with the electron capture transition close to the valence band, of which transition level epsilon (0/-1) is 0.30 eV for CSiCSi and epsilon (+1/-2) is 0.34 eV for VSiCSi. CSi and SiiCSiCSi present a bipolar doping character, and CSi tends to capture holes with transition epsilon (0/+2) = 0.10 eV. The optical transitions that typically emit or absorb light in the telecom optical wavelength bands are identified in these defects in terms of band edge recombination. The zero-phonon lines of optical transitions of epsilon (+2/+1) for VSiCSi and Ci are consistent with a previous experiment involving single-photon emitters. The findings are helpful to understand the performance degradation of silicon devices and provide a reference for identifying the structure of carbon-related defects in silicon. This study investigates carbon-related defects in silicon using hybrid functional theory with finite size correction. The research explores charge and optical transitions of defects including CSiCSi, VSiCSi, CSi, Ci, and SiiCSiCSi. Optical transitions of these defects occur in telecommunication wavelength bands, validating previous experiments. The study provides insights for detecting defects in silicon.image (c) 2024 WILEY-VCH GmbH

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