Abstract:Schematic of the WS2/h‐BN/WS2 sandwich FGFET device structure with highly n‐doped Si wafer with 300 nm SiO2 is used as the substrate and energy band diagram of the FGFET at the program state. The FGFET can achieve two mode programming state by changing the type of metal‐semiconductor contact when the floating gate applies positive and negative voltage. Research on van der Waals heterostructures based on stacked two‐dimensional atomic thickness crystals has received considerable attention because of their unique characters and great potential applications in flexible transparent electronics and optoelectronics. In this study, a nonvolatile memory device with a few‐layer bipolar material WS2 as channel and charge‐trapping layers is designed with a floating‐gate structure in which charges (electrons and holes) can be stored in the charge‐trapping layer using a dual‐mode processing program by changing the metal–semiconductor contact type. The device exhibits different programming currents during programming, in particular, the device has a low programming current for programming voltages ˂20 V. Moreover, the heterostructure exhibits a remarkable long retention time (≈10,000 s), with no apparent degradation and a strong endurance, retaining its original performance even after 1,000 programming/erasing cycles. This study proposes a novel method for reducing power consumption while programming to facilitate artificial synapse applications.

A Control-Gate-Assisted Erasing Method For A Single-Poly Eeprom Cell With Metallic Control Gate Structure

Optimization of Polysilicon Gate Etching Process in SONOS Memory Fabrication

Performance Improvement of the EEPROM Cells with the Standard Logic Process Featuring a Metal Finger Coupling Capacitor

A Novel Dual-Doping Floating-Gate (ddfg) Flash Memory Featuring Low Power and High Reliability Application

A Novel P-Channel Flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) Cell with Oxide-Nitride-Oxide (ONO) as Split Gate Channel Dielectric

Floating Gate Etch Profile Control for Nand Flash Memory

Effect Of Control Oxide On The Performance Of Nanocrystalline Silicon Based Double-Barrier Floating Gate Memory Structure

Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-Kappa Intergate Dielectrics of Flash Memory Cells

A Novel Single Poly EEPROM Cell Structure on Thin Oxide Tunnel Technology

A Study on Floating Gate Profile Control and Reliability Improvement in Planar 1XNM Nand Flash

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Dual Floating Gate Flash Cell Using Single Poly Processes

An Improved Multilevel Cell Programming Technique for 4-Bits/cell Localized Trapping SONOS Memory Devices

A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts

Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory

Process Characterization and Control of Polycrystalline SiGe As the Gate Electrode in CMOS Fabrication

Metal Floating Gate Memory Device with SiO 2 /hfo 2 Dual-Layer As Engineered Tunneling Barrier

Analysis of Trap Generation During Programming/erasing Cycling in Silicon Nanocrystal Memory Devices

New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device

Degradation of Gate Voltage Controlled Multilevel Storage in One Transistor One Resistor Electrochemical Metallization Cell

Surmounting Erase-Operation Limit in Organic Charge-Trap Memories by Fine Tuning Electron Injection at Semiconductor/Heterobimetallic Electrode Contacts