A Single-Poly EEPROM with Low Leakage Charge Pump and Peripheral Circuits for Passive RFID Tag in a Standard CMOS Technology

Fan Yang,Yongan Zheng,Chunguang Wang,Ling Shen,Huailin Liao
DOI: https://doi.org/10.1587/elex.14.20170315
2017-01-01
IEICE Electronics Express
Abstract:A complete single-poly 2k-bit EEPROM solution including memory cells and peripheral circuits is presented and embedded into a passive RFID tag using a 0.18-μm standard CMOS technology. A charge pump with a Diode-C all-pass network and peripheral circuits without static current are proposed to reduce power consumption. A three-transistor memory cell is adopted for CMOS-compatibility, low operation voltage, and low complexity of drivers. The proposed EERPOM occupies an active area of 0.21mm2. The leakage current during read operation is 36 nA from 1-V supply, while the static current during write operation is 1.3 μA from 1.8-V supply.
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