Design of an EEPROM IP for RF ID's

JI Kang-ling,LIU Zhi-hong,ZHU Jun,PAN Li-yang,WU Dong,XIAO Fang-xing
DOI: https://doi.org/10.3969/j.issn.1004-3365.2006.01.004
2006-01-01
Abstract:A 1.2 μm EEPROM process for RF ID is developed and a 1 k bit EEPROM IP circuit based on the process is designed.By modifying the circuit structure and optimizing the design,low voltage and low power have been achieved for the EEPROM IP,which can operate in a broad range of voltages.A 1.2 μm EEPROM technology compatible with CMOS process is developed to fabricate the circuit,which reduces the production cost.The EEPROM IP is applicable for RF ID's.
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