Abstract:In order to understand the mechanism of light emission and to seek the special In-related crystal microstructures associated with the elusive electron localization centers, we consider four representative In configurations (uniform, small In–N clusters, short In–N chains, and a combination of clusters and chains) in wurtzite Ga-rich InxGa1−xN alloys and InxGa1−xN/GaN strained quantum wells (QWs), respectively, and investigate their electronic structures using powerful first-principles calculations. We find that the several-atom In–N clusters can exist stably with a high concentration due to their small formation energy and play an important role in Ga-rich InxGa1−xN alloys and QWs. Unlike previous In–N-chain or In-rich quantum dot-like viewpoints, as radiative recombination centers, the several-atom In–N clusters, especially the c-plane clusters, highly localize electrons at the valence band maximum (VBM) and dominate the light emission if clusters and chains coexist in Ga-rich InxGa1−xN alloys. The microscopic arrangement of In atoms in the alloy strongly influences its band gap and bowing parameter. Moreover, the strains of the InxGa1−xN layer can enhance the electron localization of the VBM state around the clusters. The physical reasons have been analyzed in-depth. Our results are in good agreement with experiments and other calculations.

The Influence of Nitrogen Clustering Effect on Optical Transitions in GaInNAs/GaAs Quantum Wells

Anomalous Temperature Dependence of Photoluminescence in Gainnas/Gaas Multiple Quantum Wells

Influence of in Doping in GaN Barriers on Luminescence Properties of InGaN/GaN Multiple Quantum Well LEDs

The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs

Temperature－Induced Switching－Over of the Luminescence Transitions in GaInNAs／GaAs Quantum Wells

Investigation of Photoluminescence and Photoreflectance in MBE-Grown GaInNAs/GaAs QWs

Optical Study of Electronic States in Gaasn

Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells

The Influence of Well Thickness on the Photoluminescence Properties of Blue-Violet Light Emitting InGaN/GaN Multiple Quantum Wells

Spontaneous Emission Mechanisms of GaInAsN∕GaAs Quantum Dot Systems

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells

Optical Study of Localized and Delocalized States in Gaasn/Gaas

Temperature Dependence of Photoluminescence Spectra for Green Light Emission from InGaN/GaN Multiple Wells.

Enhanced Optical Properties of the Gaasn/Gaas Quantum-Well Structure by the Insertion of Inas Monolayers

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Intersubband Transitions in InGaAsN/GaAs Quantum Wells

Optical Transitions In Ganas/Gaas Single Quantum Well

Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN

Influence of Interface Structure in the Active Region on Photoluminescence in InGaN/GaN Quantum Wells

The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior

Effects of the Insertion of InAs Strain-Compensating Layers on Photoluminescence Properties of GaAsN/GaAs Quantum-Well Structures