Abstract:Gallium arsenide (GaAs) materials have the advantages of high electron mobility, electron saturation drift rate, and other irreplaceable semiconducting properties. They play an important role in the electronics, solar and other fields. However, during GaAs film sedimentary growth, As atoms can undergo segregation to form As8 clusters because of the influence of external factors, which affect the surface morphology and internal structure of these films. In this study, a series of investigations on the deposition and growth of GaAs crystal films were performed. Additionally, the deposition and growth of GaAs thin films were simulated using molecular dynamics. The influence of As8 clusters on the surface morphology and internal structure of GaAs films at different incidence angles, velocities and substrate temperatures was studied by using "defect analysis technology" and "diamond structure identification" in open source software, along with surface roughness and radial distribution function. Results show that with increasing incident angle, the number of As8 clusters decreases and film density increases. Increasing incident velocity increases the irregular movement of As8 clusters in air, and their deposition on the film surface affects the morphology of the film, the surface roughness increases first and then decreases. Additionally, we investigated the effect of different substrate temperatures on the film surface. Results show that at a substrate temperature of 1173 K, the number of As8 clusters in the film decreases or the As8 clusters disappear, heterogeneous nucleation occurs in the film, and the crystallization rate increases. Although the dislocation line associated with nucleation may affect the mechanical and optical properties of the film, it considerably reduces the annealing effort after the deposition and growth.

The Nature of As‐related Defects in Semi‐Insulating GaAs Bulk Crystals

Evolution of secondary defects in arsenic implanted Si

LOCAL ELECTRONIC-STRUCTURES OF THE NATIVE DEFECTS IN MODULATION-DOPED ALAS/GAAS SUPERLATTICES

Impurities related micro-defects in GaSb crystal grown by LEC method

Preface of 16th International Conference on Defects, Recognition, Imaging and Physics in Semiconductors

Arsenic Precipitation in Heavily Arsenic‐Doped Czochralski Silicon

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Properties of the structural defects during SiC–crystal–induced crystallization on the solid–liquid interface

Effect of Arsenic Precipitates on Fermi Level in Gaas Grown by Molecular-Beam Epitaxy at Low Temperature

The Study of Defects in Ga0.946Mn0.054As by X-ray Absorption Spectra

Investigation of Defect Formation in InGaAs on GaP/Si (100) Substrates

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Undoped Semi-Insulating Gaas Crystals Grown by A Modified Low-Pressure Lec Method

The Nature of the Si Impurity in Ultrathin AlAs/GaAs Superlattices

Secondary Defects of As-Grown Oxygen Precipitates in Nitrogen Doped Czochralski Single Crystal Silicon

First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility

The Investigation Of Impurity Distributions Around An Oval Defect In Molecular-Beam Epitaxy Algaas/Gaas Single Quantum-Wells By Transmission Electron-Microscopy And Cathodoluminescence

First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice

Effects of As8 structure formation on the surface morphology and internal microstructure of GaAs thin films

Electrical Inhomogeneity in Ga-rich Undoped GaAs Crystals: Dependence on Melt Stoichiometry and Dislocation Distribution