Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

Defect Principle and Improvement of 28nm Germanium Silicon Epitaxial Growth Process

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Abnormal Silicon-Germanium (SiGe) Epitaxial Growth in FinFETs

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Germanium doping for improved silicon substrates and devices

Evolution of secondary defects in arsenic implanted Si

Point defect–dislocation interactions in BEOL-compatible Ge-on-Si epitaxy

Micro-defects in Ge doped Czochralski grown Si crystals

Si- and Ge-Based Electronic Devices

(Invited) Defects in Cast-Mono Crystalline Silicon

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Defect free strain relaxation of microcrystals on mesoporous patterned silicon

Defect Engineering In Silicon Used For Ultra Large-Scale Integrated Circuits

The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge Pmosfets

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon