Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

Abnormal Silicon-Germanium (SiGe) Epitaxial Growth in FinFETs

Defect Principle and Improvement of 28nm Germanium Silicon Epitaxial Growth Process

Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices

Si- and Ge-Based Electronic Devices

Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors

Influence of Defects in SiC (0001) on Epitaxial Graphene

Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon-Germanium Multilayers Structures for Vertical Transistors Application

Vertical Mbe Growth Of Si Fins On Sub-10 Nm Patterned Substrate For High-Performance Finfet Technology*

The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge Pmosfets

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Abnormal Silicon Etching Behaviors in Nanometer-Sized Channels

Strain Evolution in SiGe Nanosheet Transistor Process Flow

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Unpredicted Internal Geometric Reconfiguration of an Enclosed Space Formed by Heteroepitaxy

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs

Investigation of Fabricated CMOS FishboneFETs and TreeFETs with Strained SiGe Nano-fins on Bulk-Si Substrate

Point defect–dislocation interactions in BEOL-compatible Ge-on-Si epitaxy

Body Effect of SiGe and CESL Strained Nano-Node NMOSFETs on (100) Silicon Substrate

Defect free strain relaxation of microcrystals on mesoporous patterned silicon