Abstract:Self-assembly growth of quasi-1D nanowires (NWs) has been a popular, high yield and low cost technology to fabricate ideal semiconducting channels for fin-like field effect transistors or thin film transistors (TFTs). However, a technical challenge to implementing this approach for large scale electronic applications arises from the fundamental difficulty in collecting and positioning these tiny 1D building blocks into precise locations for convenient electric connection and integration. This is particularly true when the SiNWs were grown with gas-feeding vapor-liquid-solid (VLS) approach, where the as-produced SiNWs are typically standing ones on substrate, and thus require further delicate manipulations to arrange them on planar architecture. Fortunately, this challenge can be addressed by adopting a self-assembly in-plane solid-liquid-solid (IPSLS) growth of Si nanowires (SiNWs), where a thin film of amorphous Si (a-Si) is fed as precursor layer to drive the indium (In) or tin (Sn) nano-droplets to move and produce well-defined crystalline SiNWs behind.[1] Remarkably, a precise control of the location, the growth routine and the geometry of the SiNW channels can be accomplished via a simple low temperature (<350 oC) process in conventional plasma enhanced chemical vapor deposition (PECVD) system. We will first demonstrate a reliable batch-manufacturing of parallel SiNW arrays upon glass substrates, which can serve as high mobility channels in fin-like thin film transistors (Fin-TFTs) for large area display application. Specifically, the SiNWs Fin-FETs achieve a high hole mobility of >150 cm2V–1s–1, on/off ratio >106 and excellent subthreshold swing of 120 mV/dec. In addition, the tiny SiNWs, of ~60 nm in diameter and 2 μm apart grown on glass substrate, are transparent to visible light.[2] Furthermore, we will show that the geometry degree of freedom can also be programmed during the in-plane growth of SiNWs.[3,4,5] Finally, an alloy mixture or amorphous bilayer feeding control will be presented, which can help to achieve a self-automated phase-separation and diameter modulation in a unique Si/Ge superlattice nanowire structure. There results could indicate a promising strategy to tailor the Si or SiGe nanowires for high perfomance large area electronics. References [1] L. Yu, et al., Phys. Rev. Lett. 102, 125501 (2009). [2] M. Xu et al., Nanoscale 9, 10350 (2017). [3] Z. Xue et al., Adv. Func. Mater. 26, 5352 (2016). [4] Z. Xue et al., Nature commun. 7, 12836 (2016). [5] Z. Xue et al., Nano Lett. 17, 7638 (2017)

Vertical Mbe Growth Of Si Fins On Sub-10 Nm Patterned Substrate For High-Performance Finfet Technology*

Integrated 2D multi-fin field-effect transistors

In-Plane Solid-Liquid-Solid Growth and Engineering of Si and Si/Ge Nanowires for Integratable High Performance Fin-like Thin Film Transistors

High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

Investigation of Fabricated CMOS FishboneFETs and TreeFETs with Strained SiGe Nano-fins on Bulk-Si Substrate

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon-Germanium Multilayers Structures for Vertical Transistors Application

Abnormal Silicon-Germanium (SiGe) Epitaxial Growth in FinFETs

Effects of Ultra-Thin Si-fin Body Widths Upon SOI PMOS FinFETs

Graphoepitaxially Side‐By‐Side Nanofins Along Atomic Terraces for Enhancement‐Mode FinFETs with 108 On/Off Ratio

Effects of Fin Shape on Sub-10 Nm FinFETs

Deterministic deployment of in-plane silicon nanowires for high performance large area electronics

High-fidelity Moulding Growth and Cross-section Shaping of Ultrathin Monocrystalline Silicon Nanowires

The FinFET effect in lateral 4H-SiC and Silicon multi-gate MOSFETs

A molded surface-micromachining and bulk etching release (MOSBE) fabrication platform on (1 1 1) Si for MOEMS

Improved Subthreshold Characteristics of Epi-Silicon FinFET via Fin Surface Passivation Technologies

A novel approach to Si0.5Ge0.5 channel FinFET fabrication: utilizing a three-layer SiGe strain relaxation buffer and In-Situ phosphorus doping

A High Aspect Ratio Silicon-Fin FinFET Fabricated Upon SOI Wafer

Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices

Ultrahigh vacuum chemical vapor deposition system and its application to growth of nMOSFET and HBT structures

Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy