Abstract:Gate reliability and its degradation mechanism were studied for the normally off high-electron-mobility transistors (HEMTs) with regrown p-GaN gate and AlN/SiNx stack passivation. Through comparing the forward leakage current in two designed structures, the conduction mechanism is determined to be Fowler-Nordheim tunneling whose current is independent of temperature when the Pd/p-GaN Schottky junction is under high electric field. Even for the regrown p-GaN gates, this Schottky junction fails at first, resulting in an abrupt increase in gate current. The maximum gate operation voltage with a failure rate of 1% for 10-year lifetime is estimated to be about 6.87 and 6.07 V at room temperature by adopting power law and exponential law as extrapolation fitting, respectively. Degradation process monitoring reveals that the net acceptor concentration $N_{mathrm {A}}$ extracted through $C$ – $V$ fitting presents an apparent decreasing trend from $3.8times 10^{19}$ to $1.1times 10^{19}$ cm−3 with the stress time increased from 30 to 2600 s. This is assumed to be related with the defects generation in the Schottky depletion region under high tunneling current and high electric field. These analyses show the feasibility of the normally off HEMTs with a regrown p-GaN gate and AlN/SiNx stack passivation for practical applications, giving directions for further improving the gate breakdown voltage and lifetime.

Hot-Electron-Induced Degradation in BCB- and SiN-Passivated $\hbox{al}_{0.25}\hbox{ga}_{0.75}\hbox{as/in}_{0.2}\hbox{ga}_{0.8}\hbox{as}$ PHEMTs

Investigation of Drain Current Transient in BCB- and SiN-passivated Al0.25Ga0.75As∕In0.2Ga0.8As Pseudomorphic High Electron Mobility Transistors

Hot-carrier-induced On-Resistance Degradation of Step Gate Oxide NLDMOS

Research of Hot-carrier-induced Degradation on SOI NLIGBT

Investigation on Hot-Carrier-induced Degradation of SOI NLIGBT.

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

Understanding the Degradation of InP/InGaAs Heterojunction Bipolar Transistors Induced by Silicon Nitride Passivation

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Study on the Electrical Degradation of AlGaN/GaN MIS-HEMTs Induced by Residual Stress of SiNx Passivation

The switch of the worst case on NBTI and hot-carrier reliability for 0.13μm pMOSFETs

Degradation of AlGaN/GaN Metal–insulator–semiconductor High Electron Mobility Transistors under Off-State Electrical Stress

Physically Based Analysis of Hot Carrier Induced Degradation in InP/InGaAs Double Heterojunction Bipolar Transistors

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

Degradation Mechanism of Short Channel P- FinFETs under Hot Carrier Stress and Constant Voltage Stress

Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for P-Channel Metal–Oxide–Semiconductor Field-Effect Transistors of 0.13 Μm Technology

A Comparative Study of Silicon Nitride Passivation on InP-based Double Heterojunction Bipolar Transistors (dhbts) with Different Emitter Structures

Compatibility of AlN/SiN<sub>x</sub>Passivation With LPCVD-SiN<sub>x</sub>Gate Dielectric in GaN-Based MIS-HEMT

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric