Characterization of Pd-free Electroless Co-based Cap Selectively Deposited on Cu Surface Via Borane-Based Reducing Agent

S. Y. Chang,C. C. Wan,Y. Y. Wang,C. H. Shih,M. H. Tsai,S. L. Shue,C. H. Yu,M. S. Liang
DOI: https://doi.org/10.1016/j.tsf.2006.07.044
IF: 2.1
2006-01-01
Thin Solid Films
Abstract:In this work, a highly selective and self-activated (Pd-free) Co-based deposition process for capping of Cu-lines is presented. TEM images of the cross-section of capped Cu-lines show no extraneous deposition, which translates to selectivity and direct deposition of Co-based alloy on the Cu surface without Pd-activation as a pretreatment step in conventional electroless deposition. Furthermore, an 8.6% increase in the sheet resistance(Rs) via Pd-activation process which is higher than that of the Co-based self-activated process indicates that Pd may diffuse into Cu line and induce Rs increase. Results from grazing incidence X-ray diffraction (GIXRD) analysis on as-deposited Co-based films reveal that it has a nano-crystalline structure. Such structure changes very little after annealing over 400 degrees C for 30 min. AES depth profiles also reveal a uniform distribution of the elemental components and extremely low B content. Additionally, Cu was not detected on Co cap film, indicating such films could serve as diffusion barrier layers to inhibit Cu diffusion. (c) 2006 Elsevier B.V. All rights reserved.
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