Abstract:Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

Large-Scale Synthesis and Optical Properties of Hexagonal Gan Micropyramid/Nanowire Homostructures

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Preparation of Gan Nanowires by Nonammonia Method and Their Photoelectronic Properties

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Quasi-Aligned Single-Crystalline Gan Nanowire Arrays

The Formation and Characterization of Gan Hexagonal Pyramids

Synthesis and Microstructure of Gallium Phosphide Nanowires

Morphologies of one-dimensional GaN nanostructures grown through technology

Simple And High-Yield Method For Synthesizing Single-Crystal Gan Nanowires

Large-scale Synthesis and Photoluminescence Properties of Hexagonal-Shaped SiC Nanowires

Large-scale synthesis and characterization of hexagonal prism-shaped SiC nanowires.

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

Synthesis And Characterizaton Of High-Quality Gan Nanorods With Triangular Cross Section

A Study On Self-Assembled Gan Nanobelts By A New Method: Structure, Morphology, Composition, And Luminescence

Synthesis and Field Emission Studies of Tower-Like GaN Nanowires.

Alignment Control and Atomically-Scaled Heteroepitaxial Interface Study of GaN Nanowires.

Morphological Evolution and Characterization of GaN Pyramid Arrays Fabricated by Photo-Assisted Chemical Etching

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

Self-catalyzed Molecular Beam Epitaxy Growth and Their Optoelectronic Properties of Vertical GaAs Nanowires on Si(111)

GaN Hexagonal Pyramids Formed by a Photo-Assisted Chemical Etching Method