Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Synthesis And Characterizaton Of High-Quality Gan Nanorods With Triangular Cross Section

Preparation of Gan Nanowires by Nonammonia Method and Their Photoelectronic Properties

Synthesis and Growth Mechanism: A Novel Fishing Rod-Shaped GaN Nanorods

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Synthesis, photoluminescence and field emission properties of well aligned/well patterned conical shape GaN nanorods

Microwave Hydrothermal Synthesis of Gan Nanorods

Large-scale Synthesis of GaN Nanorods and Their Photoluminescence

Synthesis of single crystalline GaN nanoribbons on sapphire (0001) substrates

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Morphologies of one-dimensional GaN nanostructures grown through technology

Synthesis and characterization of crystalline gallium nitride nanoribbon rings

A Study On Self-Assembled Gan Nanobelts By A New Method: Structure, Morphology, Composition, And Luminescence

High-Quality Gan Nanowires Synthesized Using A Cvd Approach

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Gallium oxide nanorods by the conversion of gallium oxide hydroxide nanorods

Simple And High-Yield Method For Synthesizing Single-Crystal Gan Nanowires

Synthesis and characterization of faceted hexagonal aluminum nitride nanotubes.

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

Large-scale Synthesis of Single-Phase, High-Quality GaN Nanocrystallites

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections

Gan Nanorods Coated With Pure Bn