Abstract:Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

Quasi-Aligned Single-Crystalline Gan Nanowire Arrays

Oriented Bicrystalline Gan Nanowire Arrays Suitable for Field Emission Applications

Needlelike Bicrystalline GaN Nanowires with Excellent Field Emission Properties.

Alignment Control and Atomically-Scaled Heteroepitaxial Interface Study of GaN Nanowires.

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

A practical route towards fabricating GaN nanowire arrays

Synthesis and Field Emission Studies of Tower-Like GaN Nanowires.

Crystallographic Alignment of High Density Gallium Nitride Nanowire Arrays

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

Quasi-Horizontal Gan Nanowire Array Network Grown by Sublimation Sandwich Technique

Catalyst-free Synthesis of Well-Aligned ZnO Nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N Substrates.

Crystallinity-Controlled Germanium Nanowire Arrays: Potential Field Emitters

Simple And High-Yield Method For Synthesizing Single-Crystal Gan Nanowires

Fabrication Of Gan Nanowires By Ammoniating Ga2o3/Al2o3 Thin Films Deposited On Si(111) With Radio Frequency Magnetron Sputtering

Epitaxial Growth of Bottom-Crosslinked Znga2o4 Nanowire Arrays on C-Plane Gan/Al2o3 Substrate

Wurtzite-Type Faceted Single-Crystalline Gan Nanotubes

Structure and Electrical Property of Gallium Nitride Nanowires Synthesized in Plasma-Enhanced Hot Filament Chemical Vapor Deposition System

Highly Ordered GaN-based Nanowire Arrays Grown on Patterned (100) Silicon and Their Optical Properties.

Single-crystalline GaN Nanotube Arrays Grown on C-Al2o3 Substrates Using InN Nanorods As Templates

Synthesis and characterization of high purity GaN nanowires