Abstract:The crystalline properties of sol-gel derived lead-based ferroelectric thin films on several kinds of substrates were investigated. The polycrystalline lead zirconium titanate (PZT), lead lanthanum titanate (PLT) and PbTiO3 ferroelectric thin films, the highly oriented PbTiO3 ferroelectric thin films and the epitaxial growth PZT, PLT ferroelectric thin films with perovskite-type structure were prepared by the sol-gel method. Lead-based ferroelectric thin films had good ferroelectricity. The remanent polarization Pr and coercive field Ec of Pb(Zr0.5Ti0.5)O3 ceramic thin films at 1 kHz were 20 μC cm−2 and 40 kV cm−1 respectively. Pr and Ec of the PLT15 ceramic thin films at 1 kHz were 17 μC cm−2 and 46 kV cm−1 respectively. Pr and Ec of the PbTiO3 ceramic thin films at 50 Hz were 15 μC cm−2 and 80 kV cm−1 respectively. Lead-based ferroelectric thin films had good pyroelectricity. The pyroelectric coefficients y of the PLT5, PLT10, PLT15 and PbTiO3 ceramic thin films at room temperature were 3.37 × 10−8 C cm−2 K−1, 5.25 × 10−8 C cm−2 K−1, 7.10 × 10−8 C cm−2 K−1 and 2.9 × 10−8 C cm−2 K−1 respectively. The dielectric constants ϵγ of PLT and PbTiO3 ceramic thin films were about 200 and 150. The dielectric losses tan δ of PLT and PbTiO3 ceramic thin films were about 0.02 and 0.01 respectively.

Structure and Properties of Sol-Gel Processed (pb,la)tio3 Ferroelectric Thin Films

Growth and Ferroelectric Properties of Sol-Gel Derived (pbla) Tio3 Films on Metallic Lanio3-Coated Substrates

Ferroelectric Properties of Bi3.25la0.75ti3o12 Thin Films Grown on the Highly Oriented Lanio3 Buffered Pt/Ti/Sio2/Si Substrates

La-modified PbTiO3 Ferroelectric Thin Films Prepared by Sol-Gel Process

Growth and Ferroelectric Study of Bi3.25La0.75Ti3O12 Thin Films on Different Substrates

(Pb,la)(zr,sn,ti)o-3 Antiferroelectric Thin Films Grown on Lanio3-Buffered and Pt-Buffered Silicon Substrates by Sol-Gel Processing

Preparation and pyroelectric characterization of (Pb, La) TiO3 ferroelectric thin film

Epitaxial Plt Thin Films Prepared by A Sol-Gel Process

Preparation on the [(Pb,La) (Zr,Ti)O3] ferroelectric thin films by using the Sol-Gel processing

THE PROCESSING EFFECTS ON STRUCTURE AND PROPERTIES OF SOL-GEL DERIVED PLZT FERROELECTRIC THIN FILMS

Preparation and Properties of Lead-Based Ferroelectric Thin Films

Fabrication and Characterization of Sol–Gel Derived (100)‐textured (pb0.97la0.02)(zr0.95ti0.05)o3 Thin Films

The Microstructure Characteristics and Dielectric Properties of (Ba,sr)(sn,ti)o-3 Thin Films Grown by A Sol-Gel Process

Ferroelectric properties of Bi 3 . 25 La 0 . 75 Ti 3 O 12 thin films grown on the highly oriented LaNiO 3 buffered Pt Õ Ti Õ SiO 2 Õ Si substrates

Preparation of lead-based perovskite structure ferroelectric thin films by sol-gel method and the properties of the films

Preparation of Plzt Antiferroelectric Thin Films on Zro2 Buffered Substrates

The Ferroelectric and Antiferroelectric Behavior of Pbtio3/Pbzro3-Multilayered Thin Films

Ferroelectric Properties Of Pbxsr1-Xtio3 And Its Compositionally Graded Thin Films Grown On The Highly Oriented Lanio3 Buffered Pt/Ti/Sio2/Si Substrates

Study on Properties of Pb_(1-x)La_xTiO_3 Thin Films Prepared by Sol -Gel

Preparation and electric properties of PLT films from metallorganic precursor

Preparation and Optical Nonlinear Properties of PLT Ceramic Films by Sol-Gel Process