Abstract:Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in ultra-thin anti-ferroelectric films, sparking people's interest in using antiferroelectric materials as an alternative to ferroelectric ones for high-density data storage applications. Lead Zirconate (PbZrO3) is considered the prototype material for antiferroelectricity, and indeed previous studies indicated that nanoscale PbZrO3 films exhibit ferroelectricity. The understanding of such phenomena from the microstructure aspect is crucial but still lacking. In this study, we fabricated a PbZrO3 film with thicknesses varying from 5 nm to 80 nm. Using Piezoresponse Force Microscopy, we discovered the film displayed a transition from antiferroelectric behaviour in the thicker areas to ferroelectric behaviour in the thinner ones, with a critical thickness between 10 and 15 nm. In this critical thickness range, a 12 nm PZO thin film was chosen for further study using aberration-corrected scanning transmission electron microscopy. The investigation showed that the film comprises both ferroelectric and ferrielectric phases. The ferroelectric phase is characterized by polarisation along the pseudocubic [011] projection direction. The positions of Pb, Zr, and O were determined using the integrated differential phase contrast method. This allowed us to ascertain that the ferroelectric PbZrO3 unit cell is half the size of that in the antiferroelectric phase on the ab plane. The observed unit cell is different from the electric field-induced ferroelectric rhombohedral phases. Additionally, we identified a ferrielectric phase with a unique up-up-zero-zero dipole configuration. The finding is crucial for understanding the performance of ultrathin antiferroelectric thin films and the subsequent design and development of antiferroelectric devices.

The Ferroelectric and Antiferroelectric Behavior of Pbtio3/Pbzro3-Multilayered Thin Films

Properties of multi-layered PZT films

Dielectric Properties of Oriented PbZrO3 Thin Films Grown by Sol-Gel Process

Ferroelectric PbTiO 3 Thin Films

Enhancement of Energy-Storage Density in PZT/PZO-Based Multilayer Ferroelectric Thin Films

Silicon-Based Pbtio3/Pb(Zr,Ti)O-3/Pbtio3 Sandwich Structure

The Microstructure and Ferroelectric Properties of PbZr0.52Ti0.48O3 Films on Mica Substrates

Ferroelectric Properties of Bilayer Structured Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) Thin Films on Pt/TiO2/SiO2/Si Substrates

Dielectric Properties of Pb(Zr20Ti80)O3/Pb(Zr80Ti20)O3 Multilayered Thin Films Prepared by Rf Magnetron Sputtering

Direct current electric field adjustable phase transformation behavior in (Pb,La)(Zr,Ti)O3 antiferroelectric thick films

Ferroelectric And Ferromagnetic Behavior Of Pb(Zr0.52ti0.48)O-3-Co0.9zn0.1fe2o4 Multilayered Thin Films Prepared Via Solution Processing

Microstructure and Electrical Properties of Ferroelectric Pb(Zr0.53Ti0.47)O3films on Si with TiO2buffer Layers

Fabrication And Characterization Of In-Plane Polarized Pzt Films With Interdigital Electrodes

Structural Changes and Ferroelectric Properties of BiFeO<sub>3</sub>-PbTiO<sub>3</sub> Thin Films Grown via a Chemical Multilayer Deposition Method

Enhanced Ferroelectric Properties Of Pb(Ta0.05zr0.48ti0.47)O-3 Thin Films On Pt/Tio2/Sio2/Si Substrates Using La0.67sr0.33mno3 Buffer Layers

Silicon-Based PbTiO<sub>3</sub>/Pb(Zr, Ti)O<sub>3</sub>/PbTiO<sub>3</sub>Sandwich Structure

THE PROCESSING EFFECTS ON STRUCTURE AND PROPERTIES OF SOL-GEL DERIVED PLZT FERROELECTRIC THIN FILMS

Electrically induced strains and piezoelectric properties of thin layer ferroelectrics

Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films

Multiferroic Pb(Zr0.52ti0.48)O-3-Co0.9zn0.1fe2o4 Bilayer Thin Films Via A Solution Processing

Polarization loop deformations of an oxygen deficient Pb(Zr0.25,Ti0.75)O3 ferroelectric thin film