Abstract:It is demonstrated that cuprous oxide (Cu2O) can be electrodeposited epitaxially onto silicon (Si) and indium phosphide (InP) (001) single‐crystalline substrates from aqueous solution. Epitaxial electrodeposition under these conditions is remarkable considering the strong driving force for the formation of amorphous native oxide layers on Si and InP substrates. To elucidate the growth mechanisms, the microstructure of the interfaces between the Cu2O layer and the two different substrates was investigated by TEM (transmission electron microscopy) in conjunction with XEDS (X‐ray energy‐dispersive spectroscopy) and EELS (electron energy‐loss spectroscopy). In both heteroepitaxial systems, the Cu2O layers have a unique but non‐trivial crystallographic orientation relationship (OR) with the substrate, which can be described as a 45° rotation around the common [001] axis representing the substrate normal. We show that this relationship minimizes the overall misfit between corresponding interatomic spacings of the two adjacent crystals. In apparent contradiction to the unique OR, TEM revealed that in both hetero‐systems the Cu2O layer is separated from the substrate by an amorphous interlayer. The thickness of the interlayer typically is a few nanometers. The presence of an amorphous interlayer contrasts with our experimental results on electrodeposited Cu2O on Au (001) single‐crystal substrates, also included in this article, where TEM shows the Cu2O epilayer in direct contact with the substrate. XEDS and EELS analysis of the chemical composition and bonding at Cu2O/Si and Cu2O/InP interfaces in the as‐grown state as well as after tempering revealed that the interlayer is mainly composed of SiO2 and InPO4, respectively. Most likely, the observed epitaxial layers on top of an amorphous interlayer evolve by nucleation of epitaxial Cu2O directly on the substrate. While simultaneous oxidation of the substrate leads to the formation of an amorphous layer, the epitaxial nuclei can laterally overgrow the oxide. Consequently, the local composition of the amorphous layer varies with the nature of the substrate.

Formation of copper electrodeposits on an untreated insulating substrate

Direct copper plating on ultra-thin sputtered cobalt film in an alkaline bath

Electroless plating of copper through successive pretreatment with silane and colloidal silver

Formation of nanostructured copper filaments in electrochemical deposition.

Formation of Arrays of Straight Copper Wires on Solid Substrate by Electrodeposition

Effect of pH on the electrodeposition nucleation and growth mechanism of cuprous oxide

Novel Application Of The Electrodeposition On Bulk Metallic Glasses

EPITAXIAL GROWTH OF CUPROUS OXIDE ELECTRODEPOSITED ONTO SEMICONDUCTOR AND METAL SUBSTRATES

Efficient copper plating on glass substrates through amine-functionalized nanocomposite-immobilized silver nanoparticles

Electrodeposition and Optical Properties of Highly Oriented Γ-Cui Thin Films

Large-scale Growth of Copper Oxide Nanowires on Various Copper Substrates

Preparation of B2O3-ZnO-SiO2 Glass and Sintering Densification of Copper Terminal Electrode Applied in Multilayer Ceramic Capacitors

Electrodeposition of AgCuO2 Nanoplates

In Situ Study of Copper Electrodeposition on A Single Carbon Fiber

Deposition of Durable Micro Copper Patterns into Glass by Combining Laser-Induced Backside Wet Etching and Laser-Induced Chemical Liquid Phase Deposition Methods

In-Depth Study of Chemically Electrodeposited Cuprous Oxide (Cu2O) thin Films on ITO Glass

Periodic Structures of Randomly Distributed Cu/Cu2O Nanograins and Periodic Variations of Cell Voltage in Copper Electrodeposition

In Situ Visual Observation of Surface Energy-Controlled Heterogeneous Nucleation of Metal Nanocrystals

Periodical Nanostructured Multiline Copper Films Self-Organized by Electrodeposition: Structure and Properties.

Electroless Copper Deposition for Ultralarge-Scale Integration

Selective metallization of glass with improved adhesive layer and optional hydrophobic surface