Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

Design of High Speed PNP Transistor for SiGe BiCMOS Process

A Low Cost & High Performance PNP Transistor Design & Fabrication in SiGe BiCMOS

Impact of Ge Profile on Main Electrical Characteristics of SiGe

Design and Fabrication of High Speed NPN SiGe Heterojunction Bipolar Transistor

Research Progress in Ge-based Advanced Field Effect Transistor Technology

0.18 Micron BiCMOS Process with Novel Structure SiGeC HBT

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Lateral Ge/Sige/Si Hetero-Channel P-Type Mosfets

Si- and Ge-Based Electronic Devices

Very High Speed Poly-Si Emitter Bipolar Transistor and Circuit

p-i-n Switch Diode Design in SiGe HBT BiCMOS Process

Study on the Characteristics of the SiGe NPN HBT with Novel Structure

Very high speed polysilicon emitter bipolar transistor and circuit

Design and Fabrication of Si/SiGe PMOSFETs

Ultra High-voltage SiGe HBT with Non-epi Collector

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Development on Si/SiGe heterojunction bipolar transistors

New Materials for Post-Si Computing: Ge and GeSn Devices

Emitter-base short issue study and improvement in a low cost and high performance 0.18um SiGe BiCMOS process

A novel PIN switch diode integrating with 0.18um SiGe HBT BiCMOS process

Study of unique pseudo buried layer in 0.18um SiGe BiCMOS process