Abstract:Al-doped ZnO films were grown by reactive electron beam evaporation with ceramic targets,(ZnO)_(1-x)(Al_2O_3)_x(x=w(Al_2O_3)=0, 0.01,0.02,0.05),as source materials.The structural and electrical properties of Al-doped ZnO films were characterized by X-ray diffraction,Raman scattering and Hall investigations.The results showed that Al-doped ZnO films grown from(ZnO)_(1-x)(Al_2O_3)_x(x≤0.02) targets were still highly c-axis oriented,although the degree of c-axis orientation was somewhat degenerated along with further increase of Al content in the films.Raman scattering measurements indicated that the internal stress in Al-doped ZnO films increased along with the increase of Al content in the films and reached saturation in the case of x = 0.02.The actual atomic Al content in the films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was 6%,which was normalized with the Zn content in the film.The resistivity of Al-doped ZnO films first decreased with the increase of Al content in the film and reached a minimum of 7.85×10~(-4) Ω·cm at x=(0.02,) then increased with further increase of Al content in the film.The nature of the minimum resistivity of Al-doped ZnO films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was ascribed to the high electron density(1.32×10~(21) cm~(-3)) as well as its high electron mobility of 6.02 cm~2/(V·s).

Influence of Oxidant Source on Properties of ZnO Films Deposited by Atomic Layer Deposition

Oxidants in ZnO Thin Film Growth by LP-MOCVD

Effect of Various Oxidants on Reaction Mechanisms, Self‐Limiting Natures and Structural Characteristics of Al2O3 Films Grown by Atomic Layer Deposition

Influences of different oxidants on the characteristics of HfAlO_x films deposited by atomic layer deposition

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Effect of Al-doped on Optics and Electricity of ZnO (ZnO∶Al) Thin Films

A Comparative Study of Growth and Properties of Atomic Layer Deposited Transparent Conductive Oxide of Al Doped ZnO Films from Different Al Precursors

Preferential growth of ZnO thin films by the atomic layer deposition technique

Physical properties and electrical characteristics of H2O-based and O3-based HfO2 films deposited by ALD.

Influence of Hydrogen on Al-doped ZnO Thin Films in the Process of Deposition and Annealing

Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors

Oxygen influence on sputtered high rate ZnO:Al films from dual rotatable ceramic targets

Electrical and Optical Properties of Al-doped ZnO and ZnAl2O4 Films Prepared by Atomic Layer Deposition

Oxygen-induced physical property variation of deposited ZnO films by metal-organic chemical vapor deposition

Atomic layer deposition of Al-doped ZnO films using aluminum isopropoxide as the Al precursor

Effect of Al-doping on electrical and optical properties of ZnO films

The Influences of High Energetic Oxygen Negative Ions and Active Oxygen on the Microstructure and Electrical Properties of ZnO:Al Films by MF Magnetron Sputtering

Study on Chemical Solution Deposition of Aluminum-Doped Zinc Oxide Films

Atomic Layer Deposition: Effect of Various Oxidants on Reaction Mechanisms, Self-Limiting Natures and Structural Characteristics of Al2 O3 Films Grown by Atomic Layer Deposition (adv. Mater. Interfaces 14/2018)

Optical and Electrical Properties of Al-doped ZnO Thin Films by Atomic Layer Deposition

Effects of Growth Temperature and Annealing Atmosphere on Structure and Properties of ZnO:Al Thin Films