Effect of Al-doping on electrical and optical properties of ZnO films

Yao-dong Liu,Guang-yu Li,Jian-she Lian
DOI: https://doi.org/10.3969/j.issn.1671-5497.2007.03.002
2007-01-01
Abstract:Aluminum-doped zinc oxide (AZO) thin films have been deposited on quartz glass substrates by pulsed laser deposition from ablating metallic targets in oxygen atmosphere (11 Pa of oxygen pressure) and under a substrate temperature of 150°C. The structural, electrical and optical properties of these films were investigated as a function of Al-doping content in the film. It was observed that 1.37% of Al content in the film is the optimum doping content that makes the film to achieve the minimum film resistivity and strong ultraviolet emission.
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