Abstract:The increase of carrier frequency enables the utilization of the abundant high-frequency resource to meet the ceaseless demand for high data-rates. With respect to the transmitter, the design challenges include linear and high-efficiency PAs at high frequencies, low out-of-band (OOB) noise for frequency division duplex (FDD) applications, etc. Moreover, the integration of PAs on the CMOS die with other transmitter blocks greatly reduces the form factor and cuts down the cost. Among various linearization techniques, the Cartesian feedback architecture excels in its robustness against the process, voltage and temperature (PVT) variations as well as aging effects, but suffers from the noise-linearity trade-off caused by the feedback path [1]–[3]. To mitigate this issue, a Cartesian error-feedback architecture is proposed by adopting a reference path to cancel the signal before the feedback path and only leave the error information in principle. In this work, an $X -$band Cartesian error-feedback transmitter with a fully integrated power amplifier in bulk CMOS is implemented, and delivers maximum power $( \mathrm {P}_{SAT})$of 21.4dBm and output-referred 1dB compression point (OP $_{1dB})$of 21dBm. At $\mathrm {P}_{SAT}$and OP $_{1dB}$, the PA efficiency reaches 33.3% and 30.3%, with total system efficiency of 22.3% and 20.3%, respectively. Compared with the open-loop condition, the closed-loop transmitter demonstrates up to 13.6dB suppression of ACLR using WCDMA uplink (UL) signals, and improves EVM by over 6dB for 4Ms/s 64-QAM signals and over 3dB up to 16Ms/s signals. The out-of-band noise at 100MHz is -133/-131.8dBm/Hz for the lower and upper sidebands respectively.

A Multi-Band Low-Noise Transmitter With Digital Carrier Leakage Suppression and Linearity Enhancement

A Triple-Band Flexible Low-Noise Transmitter With Linearity Enhancement

28.8 A 21dBm-OP<inf>1dB</inf> 20.3%-Efficiency -131.8dBm/Hz-Noise X-Band Cartesian-Error-Feedback Transmitter with Fully Integrated Power Amplifier in 65nm CMOS

A 21dBm-OP1dB 20.3%-Efficiency-131.8dBm/Hz-Noise X-Band Cartesian-Error-Feedback Transmitter with Fully Integrated Power Amplifier in 65nm CMOS

A Low-Noise WCDMA Transmitter with 25%-Duty-cycle LO Generator in 65nm CMOS

A Low-Power Low-Noise Direct-Conversion Front-End with Digitally Assisted IIP2 Background Self Calibration

A 21-Dm-op 1 Db 20.3%-Efficiency −131.8-Dbm/hz-noise $X$ -Band Cartesian Error Feedback Transmitter with Fully Integrated Power Amplifier in 65-Nm CMOS

A Novel Low-Noise High-Linearity CMOS Transmitter for Mobile UHF RFID Reader

A high-linearity receiver RF front-end with a high-performance 25%-duty-cycle LO generator for WCDMA/GSM applications

A 130nm CMOS direct conversion transmitter for WCDMA

Analysis and Design of a High-Linearity Receiver RF Front-End with an Improved 25%-Duty-cycle LO Generator for WCDMA/GSM Applications

A High-Linearity WCDMA/GSM Reconfigurable Transceiver in 0.13- CMOS

Design And Simulation Of Low Noise Amplifier For Radio Frequency Front End Of Wireless Communication

A Low-Power, Low-EVM, SAW-Less WCDMA Transmitter Using Direct Quadrature Voltage Modulation

A High Linearity Variable Gain LNA for WCDMA Receiver Front-End

CMOS Highly Linear Direct-Conversion Transmitter for WCDMA with Fine Gain Accuracy

A Low-Power WCDMA Transmitter With an Integrated Notch Filter

A 0.1&#x2013;5ghz SDR Transmitter with Dual-Mode Power Amplifier and Digital-Assisted I/Q Imbalance Calibration in 65nm CMOS

A Low-Power GSM/EDGE/WCDMA Polar Transmitter in 65-nm CMOS

A Baseband Lpf for Gsm, Td-Scdma and Wcdma Multi-Mode Transmitters

A 0.1–6.0-Ghz Dual-Path SDR Transmitter Supporting Intraband Carrier Aggregation in 65-Nm CMOS