Abstract:The increase of carrier frequency enables the utilization of the abundant high-frequency resource to meet the ceaseless demand for high data-rates. With respect to the transmitter, the design challenges include linear and high-efficiency PAs at high frequencies, low out-of-band (OOB) noise for frequency division duplex (FDD) applications, etc. Moreover, the integration of PAs on the CMOS die with other transmitter blocks greatly reduces the form factor and cuts down the cost. Among various linearization techniques, the Cartesian feedback architecture excels in its robustness against the process, voltage and temperature (PVT) variations as well as aging effects, but suffers from the noise-linearity trade-off caused by the feedback path [1]–[3]. To mitigate this issue, a Cartesian error-feedback architecture is proposed by adopting a reference path to cancel the signal before the feedback path and only leave the error information in principle. In this work, an $X -$band Cartesian error-feedback transmitter with a fully integrated power amplifier in bulk CMOS is implemented, and delivers maximum power $( \mathrm {P}_{SAT})$of 21.4dBm and output-referred 1dB compression point (OP $_{1dB})$of 21dBm. At $\mathrm {P}_{SAT}$and OP $_{1dB}$, the PA efficiency reaches 33.3% and 30.3%, with total system efficiency of 22.3% and 20.3%, respectively. Compared with the open-loop condition, the closed-loop transmitter demonstrates up to 13.6dB suppression of ACLR using WCDMA uplink (UL) signals, and improves EVM by over 6dB for 4Ms/s 64-QAM signals and over 3dB up to 16Ms/s signals. The out-of-band noise at 100MHz is -133/-131.8dBm/Hz for the lower and upper sidebands respectively.

A Low-Power WCDMA Transmitter With an Integrated Notch Filter

28.8 A 21dBm-OP<inf>1dB</inf> 20.3%-Efficiency -131.8dBm/Hz-Noise X-Band Cartesian-Error-Feedback Transmitter with Fully Integrated Power Amplifier in 65nm CMOS

A 21dBm-OP1dB 20.3%-Efficiency-131.8dBm/Hz-Noise X-Band Cartesian-Error-Feedback Transmitter with Fully Integrated Power Amplifier in 65nm CMOS

A 11.2 Mw 48–62 GHz Low Noise Amplifier in 65 Nm CMOS Technology

Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

Design of a Low Power 60ghz OOK Receiver in 65nm CMOS Technology

A Low Phase Noise V-Band 40 Nm Cmos Phase Locked Loop For Wireless Communication

A Sub-GHz CMOS Low-IF Receiver for Lot Applications

A Sub-GHz Low-Power Receiver Employing Resistive-Feedback-Tuned LNA with 2.1-Db NF and 106-Db Gain Tuning Range

A Low-Power GSM/EDGE/WCDMA Polar Transmitter in 65-nm CMOS

A Low-Power, Low-EVM, SAW-Less WCDMA Transmitter Using Direct Quadrature Voltage Modulation

A Multi-Band Low-Noise Transmitter With Digital Carrier Leakage Suppression and Linearity Enhancement

CMOS Highly Linear Direct-Conversion Transmitter for WCDMA with Fine Gain Accuracy

A 130nm CMOS direct conversion transmitter for WCDMA

A Superheterodyne Receiver Front-End with On-Chip Automatically Q-tuned Notch Filters

A Baseband Lpf for Gsm, Td-Scdma and Wcdma Multi-Mode Transmitters

A Highly Linear Lowpass Filter for GSM /WCDMA Receivers

A Triple-Band Flexible Low-Noise Transmitter With Linearity Enhancement

Analog baseband for WCDMA implementation by using digital-controlled DC Offset Cancellation

A Reconfigurable Low Power Filter in 65 nm CMOS for Multi-standard Transmitters

SAW-Less Direct RF Transmitter With Multimode Noise Shaping and Tri-Level Time-Approximation Filter