Design And Simulation Of Low Noise Amplifier For Radio Frequency Front End Of Wireless Communication

ShiSheng Jin,WeiWei Cheng,Shurong Dong,Yan Han,Shun Yuan,Jun Yong Wang,Jue Li
2010-01-01
Abstract:This paper presents the design of 2 GHz front end low noise amplifier application. The progress of the 3G wireless communication has the demand for the development of low cost; low power and small size transceiver by using microstrip technology. Design and simulation of low noise amplifier circuits are presented. It is focusing on development of low noise amplifier operating at 2000 MHz for the third generation wireless communication application. The amplifier design comprised AT-41411 and lumped elements to implement the matching networks. Hewlett-Packard's AT-41411 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The target simulation are gain (S-21) > 10 dB, noise figure as low as possible (given the bias conditions) with < 10 dB, and input and output return loss < -10 dB at 2000 MHz.
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