Design of X-band Low Noise Amplifer

Wang Qin

DOI: https://doi.org/10.3969/j.issn.1001-7100.2005.02.019

2005-01-01

Abstract:This paper introduces some elements in the design of X-band low noise amplifer, and some items that must being noticed in the experiment.

What problem does this paper attempt to address?

Analysis And Design Of Inductorless Wideband Low-Noise Amplifier With Noise Cancellation Technique

Yiming Yu,Kai Kang,Yiming Fan,Chenxi Zhao,Huihua Liu,Yunqiu Wu,Yong-Ling Ban,Wen-Yan Yin

DOI: https://doi.org/10.1109/ACCESS.2017.2692765

IF: 3.9

2017-01-01

IEEE Access

Abstract:This paper deals with the fabrication of an inductorless wideband low-noise amplifier (LNA). The LNA includes two branches in parallel: a common-source (CS) path and a common-gate (CG) path. The CS path is responsible for providing enough power gain, while the CG path is used to achieve the input impedance matching. To eliminate the noise contribution of the CG path, the noise cancellation technique is applied. Therefore, the overall noise figure (NF) is improved. The phase mismatch between the two paths is also quantitatively analyzed to investigate its effect on gain and NF. The analytical results agree well with the simulation results. The LNA has been fabricated by a commercial 0.18-mu m CMOS process. The measurement results show that the LNA has achieved a maximum gain of 14.5 dB with 1.7-GHz 3-dB gain bandwidth and a minimum NF of 3 dB. The tested input 1-dB gain compression point (IP1 dB) is -10.4 dBm at 1 GHz and the input third-order intercept point is 0.25 dBm. With 1.8-V supply, the LNA draws only 6-mA dc current.
Analysis and Design of Wideband Low Noise Amplifier with Digital Control

Boyu Hu,Xiaopeng Yu,Lenian He,Wei Meng Lim,Kiat Seng Yeo

2010-01-01

Abstract:The design issues in designing low noise amplifier (LNA) for Software-Defined-Radio (SDR) are reviewed. An inductor-less wideband low noise amplifier aiming at low frequency band (0.2-2 GHz) for Software-Defined-Radio is presented. Shunt-shunt LNA with active feedback is used as the first stage which is carefully optimized for low noise and wide band applications. A digitally controlled second stage is employed to provide an additional 12 dB gain control. A novel method is proposed to bypass the first stage without degrading the input matching. This LNA is fabricated in a standard 0.18 mu m CMOS technology. The measurement result shows the proposed LNA has a gain range of 6 dB-18 dB at high gain mode and -12 dB to 0 dB at low gain mode, as well as a -3dB bandwidth of 2 GHz. The noise figure (NF) is 3.5-4.5 dB in the high gain setting mode. It consumes 20 mW from a 1.8 V supply.
Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

Boyu Hu,Xiao Peng Yu,Wei Meng Lim,Kiat Seng Yeo

DOI: https://doi.org/10.1109/tie.2013.2297434

IF: 7.7

2014-01-01

IEEE Transactions on Industrial Electronics

Abstract:A CMOS low-noise amplifier (LNA) for ultrawideband universal radio is presented. Based on capacitive cross-coupled dual-gm-enhancement topology, the circuit topology could be reconfigured as different versions for single-ended or differential inputs. One possible input/output resonant scheme is analyzed and may help the LNA to exhibit input matching, low noise, and flat gain in an ultra-wide frequency band with relatively low power consumption. Both a differential-input-differential-output and a single-ended-input-differential-output version are fabricated in 0.18 μm CMOS technology. The differential-input version achieves an 11-14 dB S21, ≤ -9 dBS11 within 1.4-11.4 GHz, and a minimum noise figure of 3.9 dB; the single-ended-input version achieves a 5-8 dB S21, ≤ -10 dBS11 among 2.4-11.7 GHz, and a minimum noise figure of 6.3 dB.
Design And Simulation Of Low Noise Amplifier For Radio Frequency Front End Of Wireless Communication

ShiSheng Jin,WeiWei Cheng,Shurong Dong,Yan Han,Shun Yuan,Jun Yong Wang,Jue Li

2010-01-01

Abstract:This paper presents the design of 2 GHz front end low noise amplifier application. The progress of the 3G wireless communication has the demand for the development of low cost; low power and small size transceiver by using microstrip technology. Design and simulation of low noise amplifier circuits are presented. It is focusing on development of low noise amplifier operating at 2000 MHz for the third generation wireless communication application. The amplifier design comprised AT-41411 and lumped elements to implement the matching networks. Hewlett-Packard's AT-41411 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The target simulation are gain (S-21) > 10 dB, noise figure as low as possible (given the bias conditions) with < 10 dB, and input and output return loss < -10 dB at 2000 MHz.
Design and Optimization of a Milli-Meter Wave Amplifier Using Nano-Scale CMOS Devices

Wen Lin Xu,Xiao Peng Yu,Wei Meng Lim,Kiat Seng Yeo

DOI: https://doi.org/10.1166/nnl.2014.1859

2014-01-01

Nanoscience and Nanotechnology Letters

Abstract:This letter reviews some fundamental trade-offs in RF amplifier design as well as optimization from devices to circuit design using nano-scale CMOS process, that reduces the impact of manufacturing variations on integrated wideband low noise amplifiers (LNA). The design considerations include the unity-gain frequency, high frequency noise, power consumption and linearity of active devices in addition to accurate physic models for passive components such as RF and transmission lines. All these considerations are traded off among a system designs aspect. For an example in a commercial 65 nm CMOS technology design, by optimizing the unity width of the transistors and the transmission lines, a three-stage LNA achieves a peak gain of 22.3 dB at 60 GHz with a Noise Figure of 5.17 dB. Each stage consumes 5.2 mA from a supply voltage of 1.5 V. By using Monte Carlo simulation, the LNA with optimized transistor and interconnects has a higher gain and lower Noise Figure. The circuit is able to work robustly against process variations by optimizing the transistors and the transmission lines.
Compact 50-62 GHz Current-Reused Low-Noise Amplifier with Gate-Drain Transformer Feedback

Chen Feng,Xiaopeng Yu,Wei Meng Lim,Jiangmin Gu,Wenquan Sui

DOI: https://doi.org/10.1049/el.2013.0817

2013-01-01

Electronics Letters

Abstract:A compact two-stage 50–62 GHz low-noise amplifier is proposed. Gate-drain transformer feedback and the current-reuse technique are employed to achieve input impedance matching, a low noise figure and low power dissipation simultaneously. The proposed low-noise amplifier, implemented in the Global Foundries 65 nm CMOS process, exhibits a peak gain of 11.8 dB at 58.5 GHz and a minimum noise figure of 5.6 dB. It consumes 15.4 mW from 1.5 V supply with a small area of 0.12 mm2 including all testing pads.
Design of radio frequency low-noise amplifier

Yang Guomin,Xiao Gaobiao

DOI: https://doi.org/10.3969/j.issn.1002-7300.2006.01.001

2006-01-01

Abstract:Three kinds of circuit architecture of radio frequency low noise amplifier are introduced.Inductivedegenerate cascode architecture is widely used for its high gain,low noise figure and good isolation between input and output.Based on this circuit,a highly stable LNA structure and a bias current reuse structure to reduce power dissipation are presented.
The Design Of Cmos Rf Low Noise Amplifiers

K Cao,Hz Yang,H Wang

DOI: https://doi.org/10.1109/ICASIC.2003.1277406

2003-01-01

Abstract:A design approach of CMOS radio frequency (RF) low noise amplifiers (LNAs) is presented in this paper. With short-channel MOSFET model. analytical model of the source degenerated amplifiers is derived and verified by simulation at 2.4GHz with 0.18mum technology. It is shown that low noise and low power may probably be achieved simultaneously. With the help of these models, the designer can not only get the LNA performance quickly, but also gain the optimal designs or quickly and intuitively dig out the problem of the circuitry.
Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives

Longhi,Pace,Colangeli,Ciccognani,Limiti

DOI: https://doi.org/10.3390/electronics8111222

IF: 2.9

2019-10-25

Electronics

Abstract:An overview of applicable technologies and design solutions for monolithic microwave integrated circuit (MMIC) low-noise amplifiers (LNAs) operating at millimeter-wave are provided in this paper. The review starts with a brief description of the targeted applications and corresponding systems. Advanced technologies are presented highlighting potentials and drawbacks related to the considered possibilities. Design techniques, applicable to different requirements, are presented and analyzed. An LNA operating at V-band (59–66 GHz) is designed and tested following the presented guidelines, demonstrating state-of-the-art results in terms of noise figure (average NF < 2 dB). A state-of-the-art table, reporting recent results available in open literature on this topic, is provided and examined, focusing on room temperature operation and performance in cryogenic environment. Finally, trends versus frequency and perspectives are outlined.

engineering, electrical & electronic,computer science, information systems,physics, applied
Design and Fabrication of an X-Band Low Noise Amplifier Using FR-4 for Military Radar and Ground Station Receiver Applications

Ta Phuong Linh,Tran Chinh Doan,Bach Gia Duong

DOI: https://doi.org/10.25073/2588-1124/vnumap.4670

2022-06-23

Abstract:The low noise amplifier (LNA) plays an important role in the radiofrequency receiver front-ends, its main function is to amplify the weak receiving signal from the ground noise, as well as improving the receiver sensitivity. For LNAs which operate in the frequencies higher than the S-band, the printed circuit board (PCB) with high cost substrate materials have been used in almost designs so far, thus increasing the total price of the entire receiving unit. This paper introduces a new approach, in which a LNA has been designed using the FR-4 material, a common, low-cost substrate in PCB fabrication. The proposed LNA will maintain the quality of all of the important parameters such as gain, noise figure in compared with the LNAs designed by high cost material substrates. The stepped impedance matching technique is used in order to reach a balance between the circuit dimension and its efficiency. The frequency range of the proposed LNA lies within the X-band, which is a suitable range for military RADAR applications. Furthermore, it is possible to apply the desired LNA in the ground station receiver front-ends of a Low Earth Orbit (LEO) Earth Observation Satellite system
Design of a Wideband Low Noise Amplifier for 70-1000Mhz Frequency Range

Dan Liu,Yingyu Chen,Yuanchun Zhou,Zhangwen Tang

DOI: https://doi.org/10.1109/icsict.2018.8565015

2018-01-01

Abstract:This paper presents a variable gain wideband low noise amplifier working in 70MHz-1GHz frequency range designed in TSMC0.18μm CMOS technology. In this design, a common-source stage with active-feedback structure is used to satisfy the requirements of input matching and noise figure. Simulation results indicate the maximum gain of the proposed LNA is 20 dB, while its noise figure is lower than 2.5 dB. The S11 parameter stays below -10 dB and the value of the input third intercept point(IIP3) is 1.9 dBm. Also, the LNA consumes 17 mA and supplies by 1.8 V.
A MMIC Ultra-Low Noise Amplifier for S-Band Application

Yuchen Wang,Jiangtao Sun,Gaopeng Chen,Dunshan Yu

DOI: https://doi.org/10.1109/cstic.2019.8755624

2019-01-01

Abstract:A MMIC low noise amplifier for S-band application with ultra-low noise figure is proposed in this paper. Low noise amplifier is one of the most important components for a receiver in the wireless communication system. Adding the improved capacitance in the LNA circuit design and based on 0.25-um enhancement-mode (E-mode) pseudomorphic high electron-mobility transistor (pHEMT) process, the proposed LNA achieves 0.2dB noise figure (NF) for S-band while the minimum NF=0.12dB occurs at 2.25GHz.
Design of a Low Power CMOS Low Noise Amplifier

XIAO Jun,LI Yong-ming,WANG Zhi-hua

DOI: https://doi.org/10.3969/j.issn.1004-3365.2006.05.034

2006-01-01

Abstract:A design approach for low power CMOS low noise amplifier(LNA) is presented and it is compared with the traditional LNA design method.Simulation results indicate that,with the proposed approach,a 0.18 μm CMOS LNA at 1.58 GHz could provide sub-1dB noise figure with only 1.9 mA current consumption.
Design and Implementation of Balanced Low-Noise Amplifier with Current Alarm

吴一多,陈晓光,宋汉斌

DOI: https://doi.org/10.3969/j.issn.1005-9490.2009.04.010

2009-01-01

Abstract:A design scheme and test results of an integrated low noise balanced amplifier with current alarm are described.Matched networks are designed using a micro-strip and lumped elements structure.Circuit design and simulation are performed with ADS.The amplifier provides a gain of 16.5±0.5 dB,return loss of-20 dB and a noise figure below 1 dB in the frequency range of 1710~1780 MHz.Test results show that the circuit has met the specifications.
Design of Low-Voltage Low Noise Amplifiers with High Linearity

Ke Cao,Huazhong YANG,Hui Wang

DOI: https://doi.org/10.3321/j.issn:0253-4177.2004.11.004

2004-01-01

Abstract:A CMOS radio frequency low noise amplifier with high linearity and low operation voltage of less than 1.0V is presented.In this circuit,an auxiliary MOSFET in the triode region is used to boost the linearity.Simulation shows that this method can boost the input-referred 3rd-order intercept point with much less power dissipation than that of traditional power/linearity tradeoff solution which pays at least 1dB power for 1dB linearity improvement.It is also shown that the size of the common-gate PMOS transistor needs to be optimized to reduce its loaded input impedance so as not to degrade the linearity due to high voltage gain at its source terminal.The simulation is carried out with TSMC 0.18μm RF CMOS technology and SpectreRF.
Analysis and Design of a 2-40.5 GHz Low Noise Amplifier With Multiple Bandwidth Expansion Techniques

Jingxin Fan,Cheng Tan,Jiaxuan Li,Jialong Zeng,Yang Yuan,Ding He,Zhongjun Yu

DOI: https://doi.org/10.1109/ACCESS.2023.3243090

IF: 3.9

IEEE Access

Abstract:This paper analyzes the main factors limiting the bandwidth expansion of low-noise amplifiers (LNA) and designs a broadband LNA with a bandwidth of 2-40.5 GHz. The LNA is designed using multiple bandwidth expansion methods, including cascode, resistance feedback, and cascode Darlington amplifier. The amplitude-frequency characteristics and bandwidth expansion principle of the three structures are studied theoretically based on the small-signal equivalent circuit model. Thanks to these techniques, a three-stage LNA is designed in a 0.15- $\mu \text{m}$ GaAs pseudomorphic high-electron-mobility (pHEMT) process. The measured results show that the designed LNA achieves an average gain of 21.6 dB in 2-40.5 GHz while maintaining a noise figure (NF) below 3.6 dB. The measured output 1-dB gain compression point (OP1 dB) is from 4.5 to 12.8 dBm and the input/output return loss are better than 5 dB. The chip area is only 1.57 mm2, including input and output test pads.

Computer Science,Physics,Engineering
A DESIGN OF Ku-BAND CRYOGENIC LOW-NOISE AMPLIFIER

WANG Jing-chen,CHEN Yi-dong,GUO Xu-bo,ZHANG Xiao-ping,WEI Bin,CAO Bi-song

2012-01-01

Abstract:In this paper we present a new design of Ku-band cryogenic low-noise amplifier(LNA) using interdigital capacitance microstrip structure and improved encapsulation technology.The influence of isolators to LNA is analysed.At ambient temperature about 77K,LNA achieves performance that noise factor is less than 2.0dB,reflection coefficient is less than-17dB and gain is about 10dB.
A Wideband Low Noise Amplifier for Ultra Wide Band System

SANG Ze-hua,LI Yong-ming

DOI: https://doi.org/10.3969/j.issn.1004-3365.2006.01.032

2006-01-01

Abstract:A new design flow is presented by combining the wideband match network theory with the low noise design technique for integrated narrowband low noise amplifier(LNA).As a demonstration,a wideband LNA is designed based on this design flow,which is validated by simulation using SMIC's 0.18 μm technology.Results from the simulation show that the LNA circuit has achieved an operating frequency ranging from 3 GHz to 5 GHz,a power gain between 4.4 dB and 5.6 dB,a noise figure from 3.3 dB to 4.3 dB and an IIP3 of-0.5 dBm.The circuit dissipates 11 mA current from a single 1.8 V power supply,and it is capable of driving 1.2 pF capacitive load.
Low Noise Design of Patch Clamp Amplifier

Guo-xin KANG,Shou-bin ZOU,Liang-yi CHEN,Yue-feng YANG,Hua-guang KANG

DOI: https://doi.org/10.1109/iembs.1990.691630

2000-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:The configuration of the amplifier for recording the ionic channel current of the cell is described here. The measured currents vary from 1 pA to nanoamperes, and the output voltage is required to be processed by the computer. Therefore, the amplifier must be constructed in multistages. The key point for designing this amplifier is the low noise technique, especially for the headstage. The background noise of the main components and devices are particularly analyzed with power density spectrum SI(f) and Sv(f) to characterize their characteristics. The test results of the designed patch clamp amplifier model PG-II satisfy the practical requirement and the experimental data are given.
Design of Ultra-Low Noise Amplifier for Quantum Applications (QLNA)

Ahmad Salmanogli,Vahid Sharif Sirat

2024-02-18

Abstract:The present article primarily focuses on the design of an ultra-low-noise amplifier specifically tailored for quantum applications. The circuit design places a significant emphasis on improving the noise figure, as quantum-associated applications require the circuit's noise temperature to be around 0.4 K. This requirement aims to achieve performance comparable to the Josephson Junction amplifier. Although this task presents considerable challenges, the work concentrates on engineering the circuit to minimize mismatch and reflection coefficients, while simultaneously enhancing circuit transconductance. These efforts aim to improve the noise figure as efficiently as possible. The results of this study indicate the possibility of achieving a noise figure of approximately 0.009 dB for a unique circuit design operating at 10 K. In a departure from traditional approaches, this study employs quantum mechanical theory to analyze the circuit comprehensively. By employing quantum theory, the researchers derive relationships that highlight the crucial quantities upon which the circuit design should focus to optimize the noise figure. For example, the circuit's gain power, which depends on the circuit's photonic modes, is theoretically derived and found to affect the noise figure directly. Ultimately, by merging quantum theory with engineering approaches, this study successfully designs a highly efficient circuit that significantly minimizes the noise figure in a quantum application setting.

Quantum Physics

Design of X-band Low Noise Amplifer

Analysis And Design Of Inductorless Wideband Low-Noise Amplifier With Noise Cancellation Technique

Analysis and Design of Wideband Low Noise Amplifier with Digital Control

Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

Design And Simulation Of Low Noise Amplifier For Radio Frequency Front End Of Wireless Communication

Design and Optimization of a Milli-Meter Wave Amplifier Using Nano-Scale CMOS Devices

Compact 50-62 GHz Current-Reused Low-Noise Amplifier with Gate-Drain Transformer Feedback

Design of radio frequency low-noise amplifier

The Design Of Cmos Rf Low Noise Amplifiers

Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives

Design and Fabrication of an X-Band Low Noise Amplifier Using FR-4 for Military Radar and Ground Station Receiver Applications

Design of a Wideband Low Noise Amplifier for 70-1000Mhz Frequency Range

A MMIC Ultra-Low Noise Amplifier for S-Band Application

Design of a Low Power CMOS Low Noise Amplifier

Design and Implementation of Balanced Low-Noise Amplifier with Current Alarm

Design of Low-Voltage Low Noise Amplifiers with High Linearity

Analysis and Design of a 2-40.5 GHz Low Noise Amplifier With Multiple Bandwidth Expansion Techniques

A DESIGN OF Ku-BAND CRYOGENIC LOW-NOISE AMPLIFIER

A Wideband Low Noise Amplifier for Ultra Wide Band System

Low Noise Design of Patch Clamp Amplifier

Design of Ultra-Low Noise Amplifier for Quantum Applications (QLNA)