Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering

Qi Song,Cheng-Ren Li,Jian-Yong Li,Wan-Yu Ding,Shu-Feng Li,Jun Xu,Xin-Lu Deng,Chang-Lie Song
DOI: https://doi.org/10.1016/j.optmat.2005.08.006
IF: 3.754
2006-01-01
Optical Materials
Abstract:The Yb:Er co-doped Al2O3 thin film was deposited on oxidized silicon wafers by microwave ECR plasma source enhanced RF magnetron sputtering, and annealed from 800°C to 1000°C. The photoluminescence at 1.53μm of thin film was obtained under room temperature. The mixture phase structure of γ and θ is observed by XRD, and the compositions of the thin film are investigated by EPMA. The maximum PL intensity was achieved with O2:Ar at 1:1, annealing temperature at 900°C, and experimental ratio of Yb:Er at 1:3.6. The energy transfer mechanism between Er and Yb ions is supported by theoretical analysis and experiment results.
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