Abstract:Semiconductor quantum dots (QDs) have unique discrete energy levels determined by the particle size and material. Therefore, they have potential applications as novel optical and electronic devices. Among those, colloidal group II-VI semiconductor quantum dots stand out for their facile synthesis and band gaps aligned with the visible light spectrum. However, the electrical characterization studies of an individual quantum dot necessitate the size of nanogap electrodes being equal to the size of the quantum dot, which has conventionally been evaluated using techniques such as scanning tunneling microscopy (STM) and nanogaps fabricated by electromigration. The complexity of device fabrication has restricted research in this area. Here, we present a pioneering approach for the electrical characterization of single-QD: heteroepitaxial-spherical (HS) Au/Pt nanogap electrodes. We fabricated transistors through chemisorption, an anchoring colloidal CdS QD (3.8 nm) between the HS-Au/Pt nanogap electrodes (gap separation: 4.5 nm). The resulting device functions as a quantum-dot single-electron transistor (QD-SET), showing resonant tunneling-an inherent characteristic of the QD. A steep current increase was observed at a negative voltage, apart from the theoretical single-electron tunneling current by Coulomb blockade phenomena, which agreed with the theoretical resonant tunneling current through a discrete energy level of the QD. This underscores the promise of HS-Au/Pt nanogap electrodes in realizing single-QD devices, offering a pathway toward unlocking their full potential.

Room Temperature Observation of Electron Resonant Tunneling Through InAs/AlAs Quantum Dots

Electron Resonant Tunneling Through Inas/Gaas Quantum Dots Embedded in A Schottky Diode with an Alas Insertion Layer

Metastable state involved resonant tunneling through single InAs/GaAs quantum dot

The Photocurrent of Resonant Tunneling Diode Controlled by the Charging Effects of Quantum Dots

Resonant Tunnelling Via Inas Self-Organized Quantum Dot States

Electrical Characteristics of InAs Self-Assembled Quantum Dots Embedded in GaAs Using Admittance Spectroscopy

Optically Modulated Bistability in Quantum Dot Resonant Tunneling Diodes

Optical modes in InGaAs/GaAs quantum dot microtube ring resonators at room temperature

Relation between photocurrent and DLTS signals observed for quantum dot systems

Observation of excited states in a p-type GaAs quantum dot

Control of charging in resonant tunneling through InAs nanocrystal quantum dots

Room Temperature Resonant Tunneling and Negative Differential Resistance Effects in a Self-Assembed Si Quantum Dot Array

High Kondo temperature (TK ~ 80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

Resonant tunneling in a colloidal CdS semiconductor quantum-dot single-electron transistor based on heteroepitaxial-spherical Au/Pt nanogap electrodes

Detection of Single-Electron Charging in an Individual InAs Quantum Dot by Noncontact Atomic-Force Microscopy.

Experimental Observation of Kondo-Fano Resonant Tunneling in Silicon-Doped GaAs/AlAs Multiple Quantum Wells

Quantum dot coupled to a suspended-beam mechanical resonator: From the unresolved- to the resolved-sideband regime

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

Current Resonances and Current Platforms in a Two-Level InAs Quantum Dot with Asymmetric Terahertz Irradiations

Metastable Excited States of a Closed Quantum Dot Probed by an Aluminum Single-Electron Transistor

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence