Abstract:A design concept of carrier transport/relaxation bilayer amorphous‐oxide‐semiconductor TFTs is demonstrated to avoid the bucket effect inevitable in single‐layer devices. In&Sn‐rich InSnZnO/InSnZnO:Pr bilayer TFTs that combine high mobility (75.5 cm2 V−1 s−1), robust normalized drain current (225 μA), and satisfactory NBIS/PBTS stability (voltage shift ∼ −1.64/0.76 V) are successfully developed. Amorphous oxide semiconductor thin‐film transistors (AOS TFTs) are ever‐increasingly utilized in displays. However, to bring high mobility and excellent stability together is a daunting challenge. Here, the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the mobility‐stability conflict. The charge transport layer (CTL) is made of amorphous In‐rich InSnZnO, which favors big average effective coordination number for all cations and more edge‐shared structures for better charge transport. Praseodymium‐doped InSnZnO is used as the charge relaxation layer (CRL), which substantially shortens the photoelectron lifetime as revealed by femtosecond transient absorption spectroscopy. The CTL and CRL with the thickness suitable for industrial production respectively afford minute potential barrier fluctuation for charge transport and fast relaxation for photo‐generated carriers, resulting in transistors with an ultrahigh mobility (75.5 cm2 V−1 s−1) and small negative‐bias‐illumination‐stress/positive‐bias‐temperature‐stress voltage shifts (−1.64/0.76 V). The design concept provides a promising route to address the mobility‐stability conflict for high‐end displays.

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Low-Temperature-Processed Polycrystalline Silicon Thin-Film Transistors with Stable Solid-State Continuous-Wave Laser Crystallization

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Ultrahigh-Performance Polycrystalline Silicon Thin-Film Transistors on Excimer-Laser-Processed Pseudo-Single-Crystal Films

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Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors

Enhancing the Electrical and Thermal Stability of Organic Thin-Film Transistors by Utilizing Fluorinated Polyimide and Silicon Dioxide Bilayer Gate Dielectric

Correlation Between Electrical Characteristics and Oxide/Polysilicon Interface Morphology for Excimer-Laser-Annealed Poly-Si TFTs

Improvement of Electrical Characteristics and Stability of IGZO TFT Through Surface Single Crystallization of IGZO Film at Room Temperature

Performance Improvement of Excimer Laser Annealed Poly-Si TFTs Using Fluorine Ion Implantation

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Performance Improvement of Low-Temperature Polycrystalline Silicon Thin-Film Transistors with Fluorinated Silicate Glass Drive-In Masking Layer

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Crystallization of amorphous silicon on glass substrate by microwave annealing for thin-film-transistor applications

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