Abstract:This paper presents a novel on-chip passive device that provides a more constant characteristic impedance over a wide frequency band compared to conventional microstrip transmission lines. This device is designed for applications whose frequencies span the range of the microwave frequency region from 1 GHz to 30 GHz up to the millimeter-wave (MMW) frequency bands greater than 30 GHz. The novel, impedance-optimized, microstrip transmission line presented is well suited to reduce the effects of characteristic impedance mismatch in high-performance on-chip analog circuits where it is desirable for the transmission line characteristic impedance to remain relatively constant in all operating frequency bands. This new device utilizes the frequency-dependent nature of the silicon substrate capacitance to reduce variation in transmission line characteristic impedance with frequency. Using specially designed metal-to-silicon substrate capacitance structures designed in "windows" that perforate a bottom grounded microstrip return line to provide additional capacitance to the signal path at lower frequencies which compensates for the higher DC inductance of the thick metal signal lines at low frequencies caused by the resistance/inductance skin-effect. The proposed structure is ideal for multi-band and ultra-wide band applications, for example, analog circuits that operate in both the WCDMA range (2.11-2.17 GHz) and also in the MMW range (f > 30 GHz). An impedance-optimized transmission line is designed and studied in a 130 nm BiCMOS technology. The proposed device exhibits significantly improved characteristic impedance behavior versus frequency compared to conventional microstrip lines and can be implemented in any silicon-based analog technology.

Characterization and Attenuation Mechanism of CMOS-Compatible Micromachined Edge-Suspended Coplanar Waveguides on Low-Resistivity Silicon Substrate

High-performance CMOS-cornpatible Micromachined Edge-Suspended Coplanar Waveguides on Low Resistivity Silicon Substrate

High-Performance CMOS-Comp Edge-Suspended Coplanar W Resistivity Silicon

CMOS-compatible micromachining techniques for fabricating high-performance edge-suspended RF/microwave passive components on silicon substrates

Bandpass and Bandstop Filters Using Cmos-Compatible Micromachined Edge-Suspended Coplanar Waveguides

CMOS-Compatible Ultralow-Loss Three-Step Silicon Edge Coupler with Substrate Substitution in the Whole Communication Band

Broad-band Efficient Edge Couplers for Compact Silicon Photonic Circuits

Low Propagation Loss Ge-on-Si Waveguides and Their Dependency on Processing Methods

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Passive Devices at 2 Μm Wavelength on 200 Mm CMOS-compatible Silicon Photonics Platform [Invited]

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Efficient Coupling of Evanescent Waves in Rectangular Waveguides Based on Ultrathin Planar Capacitive Metasurfaces

Modeling and Optimization of Substrate Electromagnetic Coupling and Isolation in Modern Lightly Doped CMOS Substrate

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

On-Chip Impedance-Optimized Microstrip Transmission Line For Multi-Band And Ultra-Wide-Band Microwave Applications

An Analytical Model for Coplanar Waveguide on Silicon-on-insulator Substrate with Conformal Mapping Technique

High-Performance Edge-Suspended Spiral Inductors And Cpws On Cmos-Grade Silicon Substrates

Modeling and Parameter Extraction of Cmos On-Chip Coplanar Waveguides Up to 67 Ghz for Mm-Wave Applications

Low-Loss V-Groove Coplanar Waveguide On An Soi Substrate

A Cmos-Compatible Hybrid Plasmonic Slot Waveguide with Enhanced Field Confinement

Low-Loss Millimeter-Wave Propagation Characteristics of Nrd-Guide Surface-Mounted on Planar Substrate for Hybrid Integrated Circuit