Abstract:Electrically‐driven photonic crystal microlaser has been demonstrated, featuring continuous wave operation with an ultra‐low threshold of 10.2 μA at room temperature. This analysis shows that the temporal confinement of the photons in such laser cavities is dominated by the absorption of the p‐type doping used for electrical injection and also shows that the efficiency is limited by the leakage current. Light sources with ultra‐low energy consumption and high performance are required to realize optical interconnects for on‐chip communication. Photonic crystal (PhC) nanocavity lasers are one of the most promising candidates for this role. In this work, a continuous‐wave PhC nanolaser with an ultra‐low threshold current of 10.2 μA emitting at 1540 nm and operated at room temperature is demonstrated. The lasers are InP‐based bonded on silicon (Si), and comprise a buried heterostructure active region and lateral p–i–n junction, feature CMOS‐compatible drive voltage, and exhibit low self‐heating. Carrier leakage is a fundamental limitation of the lateral pumping scheme that is identified as unwanted spontaneous emission from the InP p–i interface, limiting the injection efficiency to 3% which further decreases at higher current. The effect of fabrication disorder and p‐doping absorption on the Q‐factor is studied experimentally showing that p‐doping limits the Q‐factor to 8000, with a p‐doping absorption coefficient of 120 cm−1.

Efficient Double Intracavity-Contacted Vertical-Cavity Surface-Emitting Lasers with Very Low-Threshold and Low-Power Dissipation Designed for Cryogenic Applications

Submilliampare threshold 1.3 mu m vertical-cavity surface-emitting lasers

Submilliampare threshold 1.3μm vertical-cavity surface-emitting lasers

Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser

Single-fundamental-mode cryogenic (3.6 K) 850-nm oxide-confined VCSEL

Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical-Cavity Surface-Emitting Lasers

Room-temperature DBR-free VCSEL operation on an InGaN/GaN thin-film platform with a monolithic surface grating

Ultra-compact, high-yield intra-cavity contacts for GaAs/AlGaAs-based vertical-cavity surface-emitting lasers

High-power and low-threshold 1200 nm InGaAs/GaAs quantum-wells VECSEL grown by MOCVD

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELs by Direct Wafer-Bonding

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

High-power, multi-junction, 905 nm vertical-cavity surface-emitting laser with an AlGaAsSb electron-blocking layer

High power density and temperature stable vertical-cavity surface-emitting laser with a ring close packing structure

Low-threshold wavelength-tunable ultraviolet vertical-cavity surface-emitting lasers from 376 to 409 nm

An InGaAs Vertical-Cavity Surface-Emitting Laser Emitting at 1130 nm for Silicon Photonics Application

Power Scaling And Beam Divergence Compression Of Bottom-Emitting Vertical-Cavity Surface-Emitting Lasers

Ohmic Contacts Technology in Long-wavelength VCSEL Structure

The Design and Fabrication of High Efficiency Low Beam Divergence 850 nm VCSELs for High Capacity Optical Transmission

Electrically‐Driven Photonic Crystal Lasers with Ultra‐low Threshold

High-Gain InAlGaAs Quaternary Quantum Wells for High-Power 760 Nm Two-Junction VCSELs

Structure Design of UVA VCSEL for High Wall Plug Efficiency and Low Threshold Current