Ultra-compact, high-yield intra-cavity contacts for GaAs/AlGaAs-based vertical-cavity surface-emitting lasers

Chin-Han Lin,Brian J. Thibeault,Yan Zheng,Mark J. W. Rodwell,Larry A. Coldren,Alok Mehta,Anis Husain

DOI: https://doi.org/10.1116/1.4769856

2013-01-01

Abstract:A novel method of fabricating compact intra-cavity contacts with high yield for GaAs/AlGaAs-based vertical-cavity surface-emitting lasers is presented. By carefully tailoring the composition of high-aluminum content layer, a highly selective Al2O3 etch-stop layer can be formed simultaneously with the oxide aperture during wet thermal oxidation. With this technique, contact metals can be uniformly deposited on deeply embedded contact layers over large substrate areas. Utilizing this embedded etch-stop design, dual intra-cavity contacted three-terminal vertical-cavity surface-emitting lasers were fabricated, demonstrating submilliampere threshold currents, over 54% differential quantum efficiencies and over 9 mW output powers.

engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied