Abstract:In the present work, the authors have studied the Quasi-Static Capacitance–Voltage (QSCV) characteristics of 10 nm gate length double gate (DG) NMOSFETs of different channel materials namely, Si, Ge, and , the results are reported using Silvaco ATLAS TCAD. The QSCV approach provides the advantage of immunity against frequency-dependent effects and has the ability to measure the small capacitance in the range of 100 fF. In this device, we consider the self-consistent solution of Schrodinger's equation with Poisson's equation. Further, the conduction band splitting in multiple sub-bands has been considered with light doping in the channel region. For this, the authors have studied C-V behaviour of the devices by observing the effect of metal gate work function engineering (using Ta, W, Mo, Ni, Au and Pt), channel engineering (using Si, and Ge) and variation of channel thickness (2 nm, 5 nm, 10 nm and 1502 nm) with gate oxide of thickness 1.2 nm. In further studies, was replaced its EOT with and results were again studied. The comparison of the behavior of C-V curve has been done for the above-mentioned channel materials. It was found that there is a significant reduction in inversion mode Capacitance with voltage for all the channel materials used for both SiO 2 based devices and with HfO 2 based devices. This has been attributed to quantization which results in a decrease in the overall gate to channel capacitance (C GC ) and hence increases the threshold voltage in MOS device. The quantization effect is lightly seen in Si for channel thickness of 2 nm, however for the same thickness, quantization is seen in Ge. Also for In 0.53 Ga 0.47 As quantization is seen for channel thickness of 2nm, 5nm, and 10 nm because of its low electron effective mass. The QSCV characteristics are also used to measure oxide thickness, flat-band voltage, threshold voltage, maximum depletion region thickness, distribution of charges in dielectric, interface traps charge and interface states between channel and gate oxide before fabrication of the device.

Analysis of Silicon Dioxide Interface Transition Region in MOS Structures

Si–SiO2 Interface Band‐gap Transition – Effects on MOS Inversion Layer

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors

Characterization of Cubic Phase MgZnO/Si(100) Interfaces

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor

Revealing the structure of SiO2 and its effects on electrical properties

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

The Effect of Multiple Interface States and Nc-Si Dots in a Nc-Si Floating Gate MOS Structure Measured by Their G — V Characteristics

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Influence of Phosphorus Diffusion on the SiO2/4H-SiC (0001) Interface During Poly Gate Formation Process

Statistical Analysis of Quantized Inversion Layer in MOS Devices with Ultra-Thin Gate Oxide and High Substrate Doping Levels

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO$_2$/4H-SiC MOSFETs

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

Quantization Effect in N-Channel Inversion Mode Si, In0.53Ga0.47As and Ge Based Double Gate MOSFET Using Quasi-Static Capacitance–Voltage Characteristics for Upcoming Sub 10 nm Technology Node

Spatially resolved dielectric loss at the Si/SiO$_2$ interface

A Nanoscale Analysis Of The Leakage Current In Sio(2) Breakdown

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation