Abstract:In this paper, ion beam-induced luminescence (IBIL) experiments were performed to investigate the in-situ luminescence of GaN/Al 2 O 3 at varying ion energies, which allowed for the measurement of defects at different depths within the material. The energies of H + were set to 500 keV, 640 keV and 2 MeV, the Bragg peaks of which correspond to the GaN film, GaN/Al 2 O 3 heterojunction and Al 2 O 3 substrate, respectively. A photoluminescence (PL) measurement at 250 K was also performed for comparison, during which only near band edge (NBE) and yellow band luminescence in the GaN film were observed. The evolution of the luminescence of NBE and the yellow band in the GaN film is discussed, and both exhibit a decrease with the fluence of H + . Additionally, the luminescence of F centers, induced by oxygen vacancies, and Cr 3+ , resulting from 2 E→ 4 A 2 radiative transition in Al 2 O 3 were measured using 2 MeV H + . The luminescence intensity of F centers increases gradually with the fluence of H + . The luminescence evolution of Cr 3+ is consistent with yellow band center, attributed to its weak intensity, and it is situated within the emission band of the yellow band in the GaN film. The results show that IBIL measurement can effectively detect the luminescence behavior of multilayer films by adjusting the ion energy. Luminescence measurement can be excited by various techniques, but IBIL can satisfy the in-situ luminescence measurement and multilayer structural materials with tens of μm can be measured through IBIL by adjusting the energy of the inducing ions. The evolution of defects at different layers with ion fluence can be obtained.

Low Energy Ga Ion Beams Bombardment Onside Insulating Materials and X-ray Emission

X-Ray Emission Measurement from Organic and Insulating Materials with Low Energy Ga Ion Beams

Relationship Between X-ray Intensity and Electric Bias on Al2O3 Surface During Low Energy Ga+ Irradiation

Applications for Synchrotron Radiation in Inertial Confinement Fusion Research

Experiments on X-ray-ablated C8H8samples

Radiative Ablation to Low-Z Matter

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Influence of D.c. Bias on Characteristic X‐ray Emission from Al2O3 Targets Bombarded with 30‐kev Ga+ Ions

Analyzing the Energy Spectra of Ion Beams Emitted from X-Pinch Plasma

The in-situ luminescence measurements of GaN/Al 2 O 3 film under different energy proton irradiation

Material-dependent emission mechanism of secondary atomic ions from solids under MeV-energy heavy ion bombardment

Characterization and analysis of infrared imaging diagnostics for intense pulsed ion and electron beams

Investigation on High-Energy Electron Irradiation on GaN Heterostructure by EBSD

Measurements of the Secondary Electron Emission of Some Insulators

Low energy ion irradiation effects in MgO: Optical property study

A Transverse Field Gas Ionization Chamber Performed at RIBLL

Infrared Imaging Diagnostics for Intense Pulsed Electron Beam.

Development of an X-ray ionization beam position monitor for PAL-XFEL soft X-rays

Unveiling the Structural and Optical Properties of MgAl2O4 Single Crystals Irradiated by Swift Heavy Ions

Surface Modification of LiNbO3 and KTa1−xNbxO3 Crystals Irradiated by Intense Pulsed Ion Beam

High‐resolution x‐ray emission spectrometry in the lithium K range with a reflection zone plate spectrometer